Datasheets
FP75R12KT4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Part Details for FP75R12KT4 by Infineon Technologies AG

Overview of FP75R12KT4 by Infineon Technologies AG

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Price & Stock for FP75R12KT4

Part # Distributor Description Stock Price Buy
DISTI # 641-FP75R12KT4
Mouser Electronics IGBT Modules 1.85V IGBT 4 PIM RoHS: Compliant 32
  • 1 $165.9300
  • 10 $159.4400
  • 20 $157.1200
  • 50 $151.5000
$151.5000 / $165.9300 Buy Now
DISTI # FP75R12KT4
TME Module: IGBT, diode/transistor, buck chopper, Urmax: 1.2kV, Ic: 75A Min Qty: 1 10
  • 1 $269.5900
  • 3 $243.8100
$243.8100 / $269.5900 Buy Now

Part Details for FP75R12KT4

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FP75R12KT4 Part Data Attributes

FP75R12KT4 Infineon Technologies AG
Buy Now Datasheet
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FP75R12KT4 Infineon Technologies AG Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-35
Pin Count 35
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X35
Number of Elements 7
Number of Terminals 35
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 385 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 620 ns
Turn-on Time-Nom (ton) 210 ns
VCEsat-Max 2.25 V

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