Part Details for FQA30N40 by onsemi
Overview of FQA30N40 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FQA30N40
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K1514
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Newark | N Channel Mosfet, 400V, 30A, To-3Pn, Channel Type:N Channel, Drain Source Voltage Vds:400V, Continuous Drain Current Id:30A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Onsemi FQA30N40 RoHS: Compliant Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.8900 / $4.0000 | Buy Now |
DISTI #
FQA30N40-ND
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DigiKey | MOSFET N-CH 400V 30A TO3PN Min Qty: 1 Lead time: 99 Weeks Container: Tube |
258 In Stock |
|
$3.0368 / $6.3800 | Buy Now |
Part Details for FQA30N40
FQA30N40 CAD Models
FQA30N40 Part Data Attributes
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FQA30N40
onsemi
Buy Now
Datasheet
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Compare Parts:
FQA30N40
onsemi
Power MOSFET, N-Channel, QFET®, 400V, 30A, 140mΩ, TO-3P, 450-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-3P, 3 PIN | |
Manufacturer Package Code | 340BZ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 1400 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.14 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 290 W | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |