Part Details for FQA44N30 by onsemi
Overview of FQA44N30 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FQA44N30
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FQA44N30
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Avnet Americas | Trans MOSFET N-CH 300V 43.5A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA44N30) RoHS: Compliant Min Qty: 174 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 1147 Partner Stock |
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$3.5836 / $4.2772 | Buy Now |
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Rochester Electronics | FQA44N30 - Power Field-Effect Transistor, 43.5A, 300V, 0.069ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 1405 |
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$3.8600 / $4.5500 | Buy Now |
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DISTI #
FQA44N30
|
Avnet Americas | Trans MOSFET N-CH 300V 43.5A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA44N30) RoHS: Compliant Min Qty: 174 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 1147 Partner Stock |
|
$3.5836 / $4.2772 | Buy Now |
|
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Ameya Holding Limited | Min Qty: 30 | 4 |
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$9.2868 / $10.3187 | Buy Now |
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DISTI #
FQA44N30
|
Avnet Americas | Trans MOSFET N-CH 300V 43.5A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA44N30) RoHS: Compliant Min Qty: 174 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 1147 Partner Stock |
|
$3.5836 / $4.2772 | Buy Now |
|
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Flip Electronics | Stock, ship today | 1147 |
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$2.8900 | RFQ |
Part Details for FQA44N30
FQA44N30 CAD Models
FQA44N30 Part Data Attributes
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FQA44N30
onsemi
Buy Now
Datasheet
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Compare Parts:
FQA44N30
onsemi
Power MOSFET, N-Channel, QFET®, 300 V, 43.5 A, 69 mΩ, TO-3P, 450-TUBE
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-3P, 3 PIN | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1700 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 43.5 A | |
| Drain-source On Resistance-Max | 0.069 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 310 W | |
| Pulsed Drain Current-Max (IDM) | 174 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |