Part Details for FQA6N90C-F109 by onsemi
Overview of FQA6N90C-F109 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FQA6N90C-F109
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, N-Channel MOSFE RoHS: Compliant Status: Obsolete Min Qty: 1 | 50 |
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$1.2700 / $1.5000 | Buy Now |
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DISTI #
FQA6N90C-F109
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Avnet Silica | Trans MOSFET N-CH 900V 6A 3-Pin TO-3PN Tube (Alt: FQA6N90C-F109) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 14 Weeks, 2 Days | Silica - 0 |
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Buy Now |
Part Details for FQA6N90C-F109
FQA6N90C-F109 CAD Models
FQA6N90C-F109 Part Data Attributes
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FQA6N90C-F109
onsemi
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Datasheet
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Compare Parts:
FQA6N90C-F109
onsemi
Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-3P, TO-3PN 3L, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-3PN 3L | |
| Package Description | ROHS COMPLIANT, TO-3PN, 3 PIN | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 650 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 2.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 198 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQA6N90C-F109
This table gives cross-reference parts and alternative options found for FQA6N90C-F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQA6N90C-F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQA6N90C_F109 | N-Channel QFET® MOSFET 900V, 6A, 2.3Ω, TO-3PN 3L, 3600-RAIL | onsemi | FQA6N90C-F109 vs FQA6N90C_F109 |
| FQA6N90C | Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | FQA6N90C-F109 vs FQA6N90C |