Part Details for FQAF10N80 by Fairchild Semiconductor Corporation
Overview of FQAF10N80 by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQAF10N80
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 6.7A, 800V, 1.05ohm, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 7549 |
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$1.5600 / $1.8300 | Buy Now |
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Chip1Cloud | MOSFET N-CH 800V 6.7A TO-3PF | 64100 |
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RFQ |
Part Details for FQAF10N80
FQAF10N80 CAD Models
FQAF10N80 Part Data Attributes
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FQAF10N80
Fairchild Semiconductor Corporation
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Datasheet
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FQAF10N80
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6.7A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-3PF | |
Package Description | TO-3PF, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 920 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 6.7 A | |
Drain-source On Resistance-Max | 1.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 113 W | |
Pulsed Drain Current-Max (IDM) | 26.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQAF10N80
This table gives cross-reference parts and alternative options found for FQAF10N80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQAF10N80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PHD83N03LT | 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | FQAF10N80 vs PHD83N03LT |
IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | FQAF10N80 vs IXFH12N100F |
SSS7N60B | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | FQAF10N80 vs SSS7N60B |
BUK465-60A | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | FQAF10N80 vs BUK465-60A |
FDP6035L | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQAF10N80 vs FDP6035L |
FQA17N40 | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | FQAF10N80 vs FQA17N40 |
SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FQAF10N80 vs SPB80N06S2-07 |
IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | FQAF10N80 vs IXFH30N40Q |
STW80N06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | FQAF10N80 vs STW80N06-10 |
IXFK35N50 | Power Field-Effect Transistor, 35A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | FQAF10N80 vs IXFK35N50 |