Part Details for FQAF6N80 by Rochester Electronics LLC
Overview of FQAF6N80 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQAF6N80
FQAF6N80 CAD Models
FQAF6N80 Part Data Attributes
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FQAF6N80
Rochester Electronics LLC
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Datasheet
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FQAF6N80
Rochester Electronics LLC
4.4A, 800V, 1.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Part Package Code | TO-3PF | |
Package Description | TO-3PF, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 680 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 4.4 A | |
Drain-source On Resistance-Max | 1.95 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | NOT APPLICABLE | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 17.6 A | |
Qualification Status | COMMERCIAL | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQAF6N80
This table gives cross-reference parts and alternative options found for FQAF6N80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQAF6N80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQPF10N60C | 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Rochester Electronics LLC | FQAF6N80 vs FQPF10N60C |
FDU6644 | 67A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 | Rochester Electronics LLC | FQAF6N80 vs FDU6644 |
SSS6N70A | 4A, 700V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN | Rochester Electronics LLC | FQAF6N80 vs SSS6N70A |
2SK3461S | 85A, 60V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | FQAF6N80 vs 2SK3461S |
FQP5P20 | 4.8A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | FQAF6N80 vs FQP5P20 |
FQAF17N40 | 12.2A, 400V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN | Rochester Electronics LLC | FQAF6N80 vs FQAF17N40 |
SPB30N03L | Power Field-Effect Transistor, 30A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | FQAF6N80 vs SPB30N03L |
FDD26AN06A0 | 7A, 60V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | Rochester Electronics LLC | FQAF6N80 vs FDD26AN06A0 |
IRFAC30 | 3.6A, 600V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Rochester Electronics LLC | FQAF6N80 vs IRFAC30 |
IRFIP440 | Power Field-Effect Transistor, 6.4A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | International Rectifier | FQAF6N80 vs IRFIP440 |