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Transistors Power Field-Effect Transistors FQB12N60CTM

FQB12N60CTM
Description: 12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3

Overview of FQB12N60CTM by Rochester Electronics LLC

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 6 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for FQB12N60CTM by Rochester Electronics LLC
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Part Data Attributes for FQB12N60CTM by Rochester Electronics LLC
Parametric Data

FQB12N60CTM
Rochester Electronics LLC
Buy Now
-
-
Pbfree Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Package Description
LEAD FREE, D2PAK-3
Pin Count
3
Reach Compliance Code
unknown
Avalanche Energy Rating (Eas)
870 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
12 A
Drain-source On Resistance-Max
0.65 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
48 A
Qualification Status
COMMERCIAL
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FQB12N60CTM
    Rochester Electronics LLC
    12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3
    VS

Alternate Parts for FQB12N60CTM

This table gives cross-reference parts and alternative options found for FQB12N60CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB12N60CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FQB12N60 Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB12N60CTM vs FQB12N60
FQB12N60C Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation FQB12N60CTM vs FQB12N60C
FQB12N20 Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB12N60CTM vs FQB12N20
FQB12N60TM_AM002 Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB12N60CTM vs FQB12N60TM_AM002
FQB12N60TM Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB12N60CTM vs FQB12N60TM
FQB12N50 Power Field-Effect Transistor, 12.1A I(D), 500V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation FQB12N60CTM vs FQB12N50

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