Datasheets
FQB12P20TM by:

Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK, 800-REEL

Part Details for FQB12P20TM by onsemi

Overview of FQB12P20TM by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for FQB12P20TM

Part # Distributor Description Stock Price Buy
DISTI # FQB12P20TMCT-ND
DigiKey MOSFET P-CH 200V 11.5A D2PAK Min Qty: 1 Lead time: 36 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $1.9600
  • 10 $1.6280
  • 100 $1.2961
  • 800 $1.0967
  • 1,600 $0.9306
  • 2,400 $0.8840
  • 5,600 $0.8508
$0.8508 / $1.9600 Buy Now
DISTI # FQB12P20TM
Avnet Americas Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 36 Weeks, 0 Days Container: Reel 0
  • 800 $0.9871
  • 1,600 $0.9608
  • 3,200 $0.9345
  • 4,800 $0.9082
  • 6,400 $0.8819
$0.8819 / $0.9871 Buy Now
DISTI # 512-FQB12P20TM
Mouser Electronics MOSFET 200V P-Channel QFET RoHS: Compliant 0
  • 1 $1.9600
  • 10 $1.6300
  • 100 $1.3000
  • 800 $0.9480
$0.9480 / $1.9600 Order Now
Future Electronics P-Channel 200 V 0.47 Ohm Surface Mount Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $0.9350
  • 1,600 $0.9150
  • 2,400 $0.9050
  • 3,200 $0.8950
  • 4,000 $0.8650
$0.8650 / $0.9350 Buy Now
Future Electronics P-Channel 200 V 0.47 Ohm Surface Mount Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $0.9350
  • 1,600 $0.9150
  • 2,400 $0.9050
  • 3,200 $0.8950
  • 4,000 $0.8650
$0.8650 / $0.9350 Buy Now
DISTI # FQB12P20TM
Avnet Americas Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 36 Weeks, 0 Days Container: Reel 0
  • 800 $0.9871
  • 1,600 $0.9608
  • 3,200 $0.9345
  • 4,800 $0.9082
  • 6,400 $0.8819
$0.8819 / $0.9871 Buy Now
DISTI # FQB12P20TM
TME Transistor: P-MOSFET, unipolar, -200V, -7.27A, 120W, D2PAK Min Qty: 1 0
  • 1 $1.7900
  • 5 $1.6000
  • 25 $1.4300
  • 100 $1.2800
  • 800 $1.1800
$1.1800 / $1.7900 RFQ
Ameya Holding Limited P-Channel 200 V 0.47 Ohm Surface Mount Mosfet - D2PAK-3 487
RFQ
DISTI # FQB12P20TM
Avnet Americas Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 36 Weeks, 0 Days Container: Reel 0
  • 800 $0.9871
  • 1,600 $0.9608
  • 3,200 $0.9345
  • 4,800 $0.9082
  • 6,400 $0.8819
$0.8819 / $0.9871 Buy Now
ComSIT USA QFET 200 V P-CHANNEL MOSFET Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Europe - 260
RFQ
DISTI # FQB12P20TM
Avnet Asia Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 36 Weeks, 0 Days 0
  • 800 $0.8659
  • 1,600 $0.8547
  • 2,400 $0.8437
  • 4,000 $0.8330
  • 8,000 $0.8125
  • 20,000 $0.7929
  • 40,000 $0.7742
$0.7742 / $0.8659 Buy Now
DISTI # FQB12P20TM
Avnet Silica Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 5 Weeks, 2 Days Silica - 0
Buy Now
DISTI # FQB12P20TM
EBV Elektronik Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 5 Weeks, 3 Days EBV - 0
Buy Now

Part Details for FQB12P20TM

FQB12P20TM CAD Models

FQB12P20TM Part Data Attributes

FQB12P20TM onsemi
Buy Now Datasheet
Compare Parts:
FQB12P20TM onsemi Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 40 Weeks
Samacsys Manufacturer onsemi
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 810 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 11.5 A
Drain-source On Resistance-Max 0.47 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 120 W
Pulsed Drain Current-Max (IDM) 46 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQB12P20TM

This table gives cross-reference parts and alternative options found for FQB12P20TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB12P20TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQB12P20 Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB12P20TM vs FQB12P20
Part Number Description Manufacturer Compare
FQB12P20 Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB12P20TM vs FQB12P20

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