Part Details for FQB19N20LTM by onsemi
Overview of FQB19N20LTM by onsemi
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FQB19N20LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FQB19N20LTMCT-ND
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DigiKey | MOSFET N-CH 200V 21A D2PAK Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.7041 / $1.6200 | Buy Now |
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DISTI #
FQB19N20LTM
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Avnet Americas | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB19N20LTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.7298 / $0.8169 | Buy Now |
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DISTI #
512-FQB19N20LTM
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Mouser Electronics | MOSFET 200V N-Ch QFET Logic Level RoHS: Compliant | 0 |
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$0.7780 / $1.6200 | Order Now |
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Future Electronics | N-Channel 200 V 0.14 Ohm Surface Mount Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Container: Reel | 0Reel |
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$0.7200 / $0.7750 | Buy Now |
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Future Electronics | N-Channel 200 V 0.14 Ohm Surface Mount Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Container: Reel | 0Reel |
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$0.7200 / $0.7750 | Buy Now |
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DISTI #
FQB19N20LTM
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Avnet Americas | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB19N20LTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.7298 / $0.8169 | Buy Now |
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DISTI #
FQB19N20LTM
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TME | Transistor: N-MOSFET, unipolar, 200V, 13.3A, Idm: 84A, 140W, D2PAK Min Qty: 1 | 106 |
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$1.0200 / $1.5400 | Buy Now |
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DISTI #
FQB19N20LTM
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Avnet Americas | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB19N20LTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.7298 / $0.8169 | Buy Now |
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DISTI #
FQB19N20LTM
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Avnet Asia | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB19N20LTM) RoHS: Compliant Min Qty: 1600 Package Multiple: 800 Lead time: 26 Weeks, 0 Days | 0 |
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$0.6407 / $0.7166 | Buy Now |
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DISTI #
FQB19N20LTM
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Avnet Silica | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB19N20LTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 3 Weeks, 6 Days | Silica - 0 |
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Buy Now |
Part Details for FQB19N20LTM
FQB19N20LTM CAD Models
FQB19N20LTM Part Data Attributes
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FQB19N20LTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB19N20LTM
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 21 A, 140 mΩ, D2PAK, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 55 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 84 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB19N20LTM
This table gives cross-reference parts and alternative options found for FQB19N20LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB19N20LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB19N20LTM_NL | Power Field-Effect Transistor, 21A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 | Fairchild Semiconductor Corporation | FQB19N20LTM vs FQB19N20LTM_NL |
| FQB19N20LTM | Power Field-Effect Transistor, 21A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 | Fairchild Semiconductor Corporation | FQB19N20LTM vs FQB19N20LTM |