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Part Details for FQB34N20LTM by onsemi
Overview of FQB34N20LTM by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQB34N20LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
67P3509
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Newark | N Channel Mosfet, 200V, 31A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:31A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQB34N20LTM Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$2.0900 / $2.5800 | Buy Now |
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DISTI #
61M6402
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Newark | Mosfet Transistor, N Channel, 31 A, 200 V, 75 Mohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi FQB34N20LTM Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$2.5200 / $3.4200 | Buy Now |
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DISTI #
34C0404
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Newark | N Channel Mosfet, 200V, 31A, D2-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:31A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2Vrohs Compliant: Yes |Onsemi FQB34N20LTM Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.6200 / $2.1700 | Buy Now |
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DISTI #
FQB34N20LTMCT-ND
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DigiKey | MOSFET N-CH 200V 31A D2PAK Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$1.6125 / $3.4500 | Buy Now |
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DISTI #
FQB34N20LTM
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Avnet Americas | Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB34N20LTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$1.4453 / $1.6179 | Buy Now |
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DISTI #
FQB34N20LTM
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Avnet Americas | Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB34N20LTM) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$1.3159 / $1.5748 | Buy Now |
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DISTI #
512-FQB34N20LTM
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Mouser Electronics | MOSFET 200V Single RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | FQB34N20L Series 200 V 31 A 75 mOhm SMT N-Channel QFET Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$1.6500 / $1.7100 | Buy Now |
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Future Electronics | FQB34N20L Series 200 V 31 A 75 mOhm SMT N-Channel QFET Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$1.6500 / $1.7100 | Buy Now |
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Future Electronics | FQB34N20L Series 200 V 31 A 75 mOhm SMT N-Channel QFET Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 800 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$1.6500 / $1.9800 | Buy Now |
Part Details for FQB34N20LTM
FQB34N20LTM CAD Models
FQB34N20LTM Part Data Attributes
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FQB34N20LTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB34N20LTM
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-3/2 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 640 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 67 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 3.13 W | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 124 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 1100 ns | |
| Turn-on Time-Max (ton) | 1150 ns |
Alternate Parts for FQB34N20LTM
This table gives cross-reference parts and alternative options found for FQB34N20LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB34N20LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB34N20L | Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | onsemi | FQB34N20LTM vs FQB34N20L |