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Part Details for FQB4N80TM by onsemi
Overview of FQB4N80TM by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQB4N80TM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
34C0406
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Newark | Transistor,mosfet,n-Channel,800V V(Br)Dss,3.9A I(D),to-263Ab Rohs Compliant: Yes |Onsemi FQB4N80TM Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.9210 / $1.2400 | Buy Now |
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DISTI #
FQB4N80TMCT-ND
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DigiKey | MOSFET N-CH 800V 3.9A D2PAK Min Qty: 1 Lead time: 36 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
613 In Stock |
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$0.9523 / $2.1900 | Buy Now |
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DISTI #
FQB4N80TM
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Avnet Americas | Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB4N80TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 36 Weeks, 0 Days Container: Reel | 0 |
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$0.9870 / $1.1049 | Buy Now |
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DISTI #
512-FQB4N80TM
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Mouser Electronics | MOSFET 800V N-Channel QFET RoHS: Compliant | 0 |
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$0.9520 / $2.1900 | Order Now |
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Future Electronics | N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Container: Reel | 0Reel |
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$0.9700 / $1.0500 | Buy Now |
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Future Electronics | N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Container: Reel | 0Reel |
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$0.9700 / $1.0500 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 3.9A, 800V, 3.6ohm, N-Channel, MOSFET, TO-263AB RoHS: Compliant Status: Active Min Qty: 1 | 800 |
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$0.9131 / $1.0700 | Buy Now |
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DISTI #
FQB4N80TM
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Avnet Americas | Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB4N80TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 36 Weeks, 0 Days Container: Reel | 0 |
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$0.9870 / $1.1049 | Buy Now |
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Ameya Holding Limited | Min Qty: 200 | 38 |
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$2.1205 / $2.1869 | Buy Now |
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DISTI #
FQB4N80TM
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Avnet Americas | Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB4N80TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 36 Weeks, 0 Days Container: Reel | 0 |
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$0.9870 / $1.1049 | Buy Now |
Part Details for FQB4N80TM
FQB4N80TM CAD Models
FQB4N80TM Part Data Attributes
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FQB4N80TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB4N80TM
onsemi
N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 45 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 460 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 3.9 A | |
| Drain-source On Resistance-Max | 3.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 15.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB4N80TM
This table gives cross-reference parts and alternative options found for FQB4N80TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB4N80TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB4N80 | Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQB4N80TM vs FQB4N80 |
| FQB4N80TM | Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQB4N80TM vs FQB4N80TM |