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Part Details for FQB50N06TM by onsemi
Overview of FQB50N06TM by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQB50N06TM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
FQB50N06TM
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Avnet Americas | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB50N06TM) RoHS: Compliant Min Qty: 550 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 551 Partner Stock |
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$1.1284 / $1.3468 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 50A, 60V, 0.022ohm, N-Channel, MOSFET, TO-263AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 555 |
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$0.5647 / $0.6644 | Buy Now |
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DISTI #
FQB50N06TM
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Avnet Americas | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB50N06TM) RoHS: Compliant Min Qty: 550 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 551 Partner Stock |
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$1.1284 / $1.3468 | Buy Now |
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DISTI #
FQB50N06TM
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TME | Transistor: N-MOSFET, unipolar, 60V, 35.4A, Idm: 200A, 120W, D2PAK Min Qty: 1 | 0 |
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$0.7500 / $1.1300 | RFQ |
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DISTI #
FQB50N06TM
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Avnet Americas | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB50N06TM) RoHS: Compliant Min Qty: 550 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 551 Partner Stock |
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$1.1284 / $1.3468 | Buy Now |
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Flip Electronics | Stock, ship today | 551 |
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$0.9100 | RFQ |
Part Details for FQB50N06TM
FQB50N06TM CAD Models
FQB50N06TM Part Data Attributes
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FQB50N06TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB50N06TM
onsemi
Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, D2PAK, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 490 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 120 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB50N06TM
This table gives cross-reference parts and alternative options found for FQB50N06TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB50N06TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB50N06L | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQB50N06TM vs FQB50N06L |
| FQB50N06LTM | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQB50N06TM vs FQB50N06LTM |
| FQB50N06LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, D2PAK, 800-REEL | onsemi | FQB50N06TM vs FQB50N06LTM |
| FQB50N06 | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQB50N06TM vs FQB50N06 |