Part Details for FQB8N60CFTM by Fairchild Semiconductor Corporation
Overview of FQB8N60CFTM by Fairchild Semiconductor Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for FQB8N60CFTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 6.26A, 600V, 1.5ohm, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 3380 |
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$0.9959 / $1.1700 | Buy Now |
Part Details for FQB8N60CFTM
FQB8N60CFTM CAD Models
FQB8N60CFTM Part Data Attributes
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FQB8N60CFTM
Fairchild Semiconductor Corporation
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Datasheet
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FQB8N60CFTM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6.26A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 6.26 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 147 W | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB8N60CFTM
This table gives cross-reference parts and alternative options found for FQB8N60CFTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB8N60CFTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SSW10N60BTM | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQB8N60CFTM vs SSW10N60BTM |
| IRFBC40STRLPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | FQB8N60CFTM vs IRFBC40STRLPBF |
| FQB5N60C | Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | FQB8N60CFTM vs FQB5N60C |
| STB9NK60ZD | 7A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 | STMicroelectronics | FQB8N60CFTM vs STB9NK60ZD |
| FQB7N60TM | Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, D2PAK, 800-REEL | onsemi | FQB8N60CFTM vs FQB7N60TM |
| FQB8N60C | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | FQB8N60CFTM vs FQB8N60C |
| 2SK3322-ZJ | 5.5A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN | Renesas Electronics Corporation | FQB8N60CFTM vs 2SK3322-ZJ |
| STB3NB60-1 | 3.3A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | STMicroelectronics | FQB8N60CFTM vs STB3NB60-1 |
| STB7NB60T4 | 7.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, D2PAK-3 | STMicroelectronics | FQB8N60CFTM vs STB7NB60T4 |
| IRFBC20STRR | Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | FQB8N60CFTM vs IRFBC20STRR |