Part Details for FQB8N60CTM by onsemi
Overview of FQB8N60CTM by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for FQB8N60CTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60J0803
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Newark | Mosfet, N-Ch, 600V, 7.5A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:7.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQB8N60CTM Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
FQB8N60CTM
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TME | Transistor: N-MOSFET, unipolar, 600V, 4.6A, Idm: 30A, 147W, D2PAK Min Qty: 1 | 0 |
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$1.1000 / $1.6400 | RFQ |
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DISTI #
3616214
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Farnell | MOSFET, N-CH, 600V, 7.5A, TO-263 RoHS: Compliant Min Qty: 800 Lead time: 12 Weeks, 1 Days Container: Reel | 0 |
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$1.0401 | Buy Now |
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Flip Electronics | Stock | 130000 |
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RFQ |
Part Details for FQB8N60CTM
FQB8N60CTM CAD Models
FQB8N60CTM Part Data Attributes
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FQB8N60CTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB8N60CTM
onsemi
Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, D2PAK, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 35 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7.5 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 147 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB8N60CTM
This table gives cross-reference parts and alternative options found for FQB8N60CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB8N60CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB8N60C | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | FQB8N60CTM vs FQB8N60C |
| FQB8N60CTM | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | Fairchild Semiconductor Corporation | FQB8N60CTM vs FQB8N60CTM |
| FQB8N60C | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | Fairchild Semiconductor Corporation | FQB8N60CTM vs FQB8N60C |