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Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84Y9964
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Newark | Mosfet, P-Channel, -60V, -9.4A, To-252-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:9.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:-10V, Gate Source Threshold Voltage Max:-4V Rohs Compliant: Yes |Onsemi FQD11P06TM RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 21109 |
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$0.6680 / $1.4300 | Buy Now |
DISTI #
85AC1805
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Newark | Mosfet, P-Channel, -60V, -9.4A, To-252-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-9.4A, Drain Source Voltage Vds:-60V, On Resistance Rds(On):0.15Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Powerrohs Compliant: Yes |Onsemi FQD11P06TM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.5090 / $0.5160 | Buy Now |
DISTI #
FQD11P06TM
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Avnet Americas | Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD11P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.3860 / $0.4004 | Buy Now |
DISTI #
FQD11P06TM
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Avnet Americas | Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD11P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.3861 / $0.4596 | Buy Now |
DISTI #
73928982
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RS | Transistor, P-channel, QFET MOSFET, -60V, -9.4A, 185 mOhm, -55 to 150C, D2PAK | ON Semiconductor FQD11P06TM RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
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$1.1600 | RFQ |
DISTI #
FQD11P06TM
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TME | Transistor: P-MOSFET, unipolar, -60V, -5.95A, 38W, DPAK Min Qty: 1 | 1254 |
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$0.5520 / $1.2240 | Buy Now |
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NexGen Digital | 2 |
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RFQ | ||
DISTI #
FQD11P06TM
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 | 0 |
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$0.4100 | Buy Now |
DISTI #
FQD11P06TM
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Avnet Asia | Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R (Alt: FQD11P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days | 0 |
|
$0.3861 / $0.4689 | Buy Now |
DISTI #
FQD11P06TM
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Avnet Silica | Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R (Alt: FQD11P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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FQD11P06TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD11P06TM
onsemi
Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 / TO-252-3 | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 160 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 9.4 A | |
Drain-source On Resistance-Max | 0.185 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 38 W | |
Pulsed Drain Current-Max (IDM) | 37.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQD11P06TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD11P06TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FQD11P06TM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | FQD11P06TM vs FQD11P06TM |
FQD11P06TF | Rochester Electronics LLC | Check for Price | 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, DPAK-3 | FQD11P06TM vs FQD11P06TF |
FQD11P06TF | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | FQD11P06TM vs FQD11P06TF |