Datasheets
FQD11P06TM by:

Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL

Part Details for FQD11P06TM by onsemi

Overview of FQD11P06TM by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation

Price & Stock for FQD11P06TM

Part # Distributor Description Stock Price Buy
DISTI # 84Y9964
Newark Mosfet, P-Channel, -60V, -9.4A, To-252-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:9.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:-10V, Gate Source Threshold Voltage Max:-4V Rohs Compliant: Yes |Onsemi FQD11P06TM RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 21109
  • 1 $1.4300
  • 10 $1.1300
  • 25 $1.0300
  • 50 $0.9220
  • 100 $0.8160
  • 250 $0.7420
  • 500 $0.6680
$0.6680 / $1.4300 Buy Now
DISTI # 85AC1805
Newark Mosfet, P-Channel, -60V, -9.4A, To-252-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-9.4A, Drain Source Voltage Vds:-60V, On Resistance Rds(On):0.15Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Powerrohs Compliant: Yes |Onsemi FQD11P06TM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $0.5160
  • 5,000 $0.5090
$0.5090 / $0.5160 Buy Now
DISTI # FQD11P06TM
Avnet Americas Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD11P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.4004
  • 5,000 $0.3955
  • 10,000 $0.3922
  • 15,000 $0.3889
  • 20,000 $0.3860
$0.3860 / $0.4004 Buy Now
DISTI # FQD11P06TM
Avnet Americas Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD11P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4596
  • 5,000 $0.3954
  • 10,000 $0.3907
  • 15,000 $0.3889
  • 20,000 $0.3861
$0.3861 / $0.4596 Buy Now
DISTI # 73928982
RS Transistor, P-channel, QFET MOSFET, -60V, -9.4A, 185 mOhm, -55 to 150C, D2PAK | ON Semiconductor FQD11P06TM RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk 0
  • 5 $1.1600
$1.1600 RFQ
DISTI # FQD11P06TM
TME Transistor: P-MOSFET, unipolar, -60V, -5.95A, 38W, DPAK Min Qty: 1 1254
  • 1 $1.2240
  • 5 $0.9230
  • 10 $0.8250
  • 50 $0.7140
  • 100 $0.5760
  • 500 $0.5520
$0.5520 / $1.2240 Buy Now
NexGen Digital   2
RFQ
DISTI # FQD11P06TM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.4100
$0.4100 Buy Now
DISTI # FQD11P06TM
Avnet Asia Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R (Alt: FQD11P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days 0
  • 2,500 $0.4689
  • 5,000 $0.4376
  • 7,500 $0.4262
  • 12,500 $0.4154
  • 25,000 $0.4052
  • 62,500 $0.3954
  • 125,000 $0.3861
$0.3861 / $0.4689 Buy Now
DISTI # FQD11P06TM
Avnet Silica Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R (Alt: FQD11P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FQD11P06TM
EBV Elektronik Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R (Alt: FQD11P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 9.4A 0.18510V4.7A 2.5W 2V250uA 1 Piece P-Channel TO-252AA MOSFETs ROHS 300
  • 1 $0.9041
  • 10 $0.7586
  • 30 $0.6796
  • 100 $0.5883
  • 500 $0.5480
  • 1,000 $0.5295
$0.5295 / $0.9041 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 292
  • 10 $6.9000
$6.9000 Buy Now

Part Details for FQD11P06TM

FQD11P06TM CAD Models

FQD11P06TM Part Data Attributes

FQD11P06TM onsemi
Buy Now Datasheet
Compare Parts:
FQD11P06TM onsemi Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3 / TO-252-3
Package Description DPAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 160 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 9.4 A
Drain-source On Resistance-Max 0.185 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 38 W
Pulsed Drain Current-Max (IDM) 37.6 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQD11P06TM

This table gives cross-reference parts and alternative options found for FQD11P06TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD11P06TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQD11P06TM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 FQD11P06TM vs FQD11P06TM
FQD11P06TF Rochester Electronics LLC Check for Price 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, DPAK-3 FQD11P06TM vs FQD11P06TF
FQD11P06TF Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 FQD11P06TM vs FQD11P06TF

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