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Transistors / Power Field-Effect Transistors / FQD12N20LTM-F085
Datasheets
FQD12N20LTM-F085 by:

Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for FQD12N20LTM-F085 by onsemi

Results Overview of FQD12N20LTM-F085 by onsemi

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FQD12N20LTM-F085 Information

FQD12N20LTM-F085 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
UPD78F0856MAA-FAA-G Renesas Electronics Corporation 8-bit Microcontrollers (Non Promotion), , /

Price & Stock for FQD12N20LTM-F085

Part # Distributor Description Stock Price Buy
DISTI # 48AC1173
Newark Nmos Dpak 200V 280 Mohm/ Reel |Onsemi FQD12N20LTM-F085 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # FQD12N20LTM-F085
TME Transistor: N-MOSFET, unipolar, 200V, 5.7A, Idm: 36A, 55W, DPAK Min Qty: 1 0
  • 1 $0.8880
  • 5 $0.7990
  • 25 $0.7070
  • 100 $0.6350
  • 500 $0.5920
$0.5920 / $0.8880 RFQ
Win Source Electronics MOSFET N-CH 200V 9A DPAK / N-Channel 200 V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA 25900
  • 70 $0.7291
  • 170 $0.5983
  • 260 $0.5796
  • 360 $0.5609
  • 465 $0.5422
  • 620 $0.4861
$0.4861 / $0.7291 Buy Now

Part Details for FQD12N20LTM-F085

FQD12N20LTM-F085 CAD Models

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FQD12N20LTM-F085 Part Data Attributes

Parametric Data
FQD12N20LTM-F085 onsemi
Buy Now Datasheet
Compare Parts:
FQD12N20LTM-F085 onsemi Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.32 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 22 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 55 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 380 ns
Turn-on Time-Max (ton) 430 ns

Alternate Parts for FQD12N20LTM-F085

This table gives cross-reference parts and alternative options found for FQD12N20LTM-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD12N20LTM-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQD12N20LTM_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 FQD12N20LTM-F085 vs FQD12N20LTM_NL
FQD12N20TM onsemi $0.4274 Power MOSFET, N-Channel, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL FQD12N20LTM-F085 vs FQD12N20TM
FQD12N20L Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 FQD12N20LTM-F085 vs FQD12N20L
FQD12N20 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 FQD12N20LTM-F085 vs FQD12N20
FQD10N20LTM onsemi Check for Price Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL FQD12N20LTM-F085 vs FQD10N20LTM
FDD10N20LZ onsemi Check for Price Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA FQD12N20LTM-F085 vs FDD10N20LZ
FQD10N20L onsemi Check for Price Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD12N20LTM-F085 vs FQD10N20L

FQD12N20LTM-F085 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FQD12N20LTM-F085 is -55°C to 150°C.

  • Yes, the FQD12N20LTM-F085 is suitable for high-reliability applications due to its robust design and manufacturing process, which ensures high reliability and low defect rates.

  • Yes, the FQD12N20LTM-F085 is AEC-Q101 qualified, making it suitable for use in automotive applications.

  • The typical turn-on and turn-off time for the FQD12N20LTM-F085 is around 10-20 ns, depending on the specific application and operating conditions.

  • Yes, the FQD12N20LTM-F085 is compatible with lead-free soldering processes, making it suitable for use in modern electronic assemblies.

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