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Transistors / Power Field-Effect Transistors / FQD12N20LTM-F085
Datasheets
FQD12N20LTM-F085 by:

Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for FQD12N20LTM-F085 by onsemi

Overview of FQD12N20LTM-F085 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
UPD78F0856MAA-FAA-G Renesas Electronics Corporation 8-bit Microcontrollers (Non Promotion), , /

Price & Stock for FQD12N20LTM-F085

Part # Distributor Description Stock Price Buy
DISTI # 48AC1173
Newark Nmos Dpak 200V 280 Mohm/ Reel |Onsemi FQD12N20LTM-F085 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # FQD12N20LTM-F085
TME Transistor: N-MOSFET, unipolar, 200V, 5.7A, Idm: 36A, 55W, DPAK Min Qty: 1 0
  • 1 $0.9160
  • 5 $0.8240
  • 25 $0.7290
  • 100 $0.6550
  • 500 $0.6100
$0.6100 / $0.9160 RFQ
Win Source Electronics MOSFET N-CH 200V 9A DPAK / N-Channel 200 V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA 25900
  • 70 $0.7291
  • 170 $0.5983
  • 260 $0.5796
  • 360 $0.5609
  • 465 $0.5422
  • 620 $0.4861
$0.4861 / $0.7291 Buy Now

Part Details for FQD12N20LTM-F085

FQD12N20LTM-F085 CAD Models

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FQD12N20LTM-F085 Part Data Attributes

Parametric Data
FQD12N20LTM-F085 onsemi
Buy Now Datasheet
Compare Parts:
FQD12N20LTM-F085 onsemi Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.32 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 22 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 55 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 380 ns
Turn-on Time-Max (ton) 430 ns

Alternate Parts for FQD12N20LTM-F085

This table gives cross-reference parts and alternative options found for FQD12N20LTM-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD12N20LTM-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQD12N20L Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 FQD12N20LTM-F085 vs FQD12N20L
Part Number Manufacturer Composite Price Description Compare
FQD12N20 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 FQD12N20LTM-F085 vs FQD12N20
FQD10N20LTM onsemi Check for Price Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL FQD12N20LTM-F085 vs FQD10N20LTM
FQD12N20LTM_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 FQD12N20LTM-F085 vs FQD12N20LTM_NL
FQD12N20LTF Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 FQD12N20LTM-F085 vs FQD12N20LTF
FQD12N20TM onsemi $0.4390 Power MOSFET, N-Channel, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL FQD12N20LTM-F085 vs FQD12N20TM
FDD10N20LZTM onsemi $0.3647 Power MOSFET, N-Channel, Logic Level, UniFETTM, 200 V, 7.6 A, 360 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL FQD12N20LTM-F085 vs FDD10N20LZTM
FDD10N20LZ onsemi Check for Price Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA FQD12N20LTM-F085 vs FDD10N20LZ

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