Datasheets
FQD12N20LTM_F085 by:

Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3

Part Details for FQD12N20LTM_F085 by Fairchild Semiconductor Corporation

Results Overview of FQD12N20LTM_F085 by Fairchild Semiconductor Corporation

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FQD12N20LTM_F085 Information

FQD12N20LTM_F085 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
UPD78F0856MAA-FAA-G Renesas Electronics Corporation 8-bit Microcontrollers (Non Promotion), , /

Part Details for FQD12N20LTM_F085

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FQD12N20LTM_F085 Part Data Attributes

FQD12N20LTM_F085 Fairchild Semiconductor Corporation
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FQD12N20LTM_F085 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.32 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 55 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FQD12N20LTM_F085 Related Parts

FQD12N20LTM_F085 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the FQD12N20LTM_F085 is not explicitly stated in the datasheet. However, Fairchild Semiconductor recommends following the SOA curves provided in the application notes to ensure safe operation.

  • The junction-to-case thermal resistance (RθJC) can be calculated using the thermal resistance values provided in the datasheet. For the FQD12N20LTM_F085, RθJC is approximately 0.5°C/W. You can use this value to estimate the junction temperature (Tj) based on the case temperature (Tc) and power dissipation (Pd).

  • The recommended gate drive voltage for the FQD12N20LTM_F085 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the application notes and Fairchild Semiconductor's guidelines for gate drive design.

  • The body diode's reverse recovery characteristics can be handled by using a snubber circuit or a diode with a fast reverse recovery time in parallel with the MOSFET. You can also consider using a MOSFET with an integrated diode or a dedicated diode with a fast reverse recovery time.

  • The maximum allowed voltage for the gate-source voltage (Vgs) during switching is ±20V. Exceeding this voltage may damage the MOSFET. It's essential to ensure that the gate drive voltage and circuitry are designed to stay within this limit.

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