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Part Details for FQD13N06LTM by onsemi
Overview of FQD13N06LTM by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for FQD13N06LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38AH0334
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Newark | Qf 60V 115Mohm L Dpak Rohs Compliant: Yes |Onsemi FQD13N06LTM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 5000 |
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$0.2830 | Buy Now |
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DISTI #
31Y1522
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Newark | Mosfet, N Ch, 60V, 11A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Onsemi FQD13N06LTM Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2789 |
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$0.3470 / $0.7870 | Buy Now |
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DISTI #
34C0419
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Newark | Mosfet Transistor, N Channel, 11 A, 60 V, 0.092 Ohm, 10 V, 2.5 V Rohs Compliant: Yes |Onsemi FQD13N06LTM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2430 / $0.3240 | Buy Now |
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DISTI #
FQD13N06LTMCT-ND
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DigiKey | MOSFET N-CH 60V 11A DPAK Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6210 In Stock |
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$0.2351 / $0.7100 | Buy Now |
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DISTI #
FQD13N06LTM
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Avnet Americas | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD13N06LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days Container: Reel | 5000 |
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$0.2520 / $0.2822 | Buy Now |
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DISTI #
FQD13N06LTM
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Avnet Americas | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD13N06LTM) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.2520 / $0.2822 | Buy Now |
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DISTI #
512-FQD13N06LTM
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Mouser Electronics | MOSFET 60V N-Channel QFET Logic Level RoHS: Compliant | 36269 |
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$0.2390 / $0.7100 | Buy Now |
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Future Electronics | N-Channel 60 V 0.115 Ohm Surface Mount LOGIC Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 52500Reel |
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$0.2350 / $0.2500 | Buy Now |
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Future Electronics | N-Channel 60 V 0.115 Ohm Surface Mount LOGIC Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.2350 / $0.2500 | Buy Now |
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Future Electronics | N-Channel 60 V 0.115 Ohm Surface Mount LOGIC Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.2350 / $0.2500 | Buy Now |
Part Details for FQD13N06LTM
FQD13N06LTM CAD Models
FQD13N06LTM Part Data Attributes
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FQD13N06LTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD13N06LTM
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.145 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD13N06LTM
This table gives cross-reference parts and alternative options found for FQD13N06LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD13N06LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD13N06 | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTM vs FQD13N06 |
| BUK92150-55A | Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | Nexperia | FQD13N06LTM vs BUK92150-55A |
| FQD13N06TF | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTM vs FQD13N06TF |
| FQD13N06LTM_NL | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTM vs FQD13N06LTM_NL |
| 934056250118 | 11A, 55V, 0.155ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | FQD13N06LTM vs 934056250118 |
| 934056250118 | Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | Nexperia | FQD13N06LTM vs 934056250118 |
| FQD13N06L | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTM vs FQD13N06L |
| FQD13N06LTF | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTM vs FQD13N06LTF |
| FQD13N06TM | Power MOSFET, N-Channel, QFET®, 60 V, 10 A, 140 mΩ, DPAK, 2500-REEL | onsemi | FQD13N06LTM vs FQD13N06TM |
| FQD13N06_NL | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTM vs FQD13N06_NL |