Part Details for FQD13N10LTM by Fairchild Semiconductor Corporation
Overview of FQD13N10LTM by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQD13N10LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 506 |
|
RFQ | ||
|
|
Bristol Electronics | 421 |
|
RFQ | ||
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 404 |
|
$0.4313 / $0.8625 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 336 |
|
$3.0525 / $5.5500 | Buy Now |
|
|
Win Source Electronics | MOSFET N-CH 100V 10A DPAK | 155500 |
|
$0.6600 / $0.9900 | Buy Now |
Part Details for FQD13N10LTM
FQD13N10LTM CAD Models
FQD13N10LTM Part Data Attributes
|
|
FQD13N10LTM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FQD13N10LTM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 95 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD13N10LTM
This table gives cross-reference parts and alternative options found for FQD13N10LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD13N10LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD13N10LTF | 10A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FQD13N10LTM vs FQD13N10LTF |
| FQD13N10LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, DPAK, 2500-REEL | onsemi | FQD13N10LTM vs FQD13N10LTM |
| FQD13N10L | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N10LTM vs FQD13N10L |
| FQD13N10LTF | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N10LTM vs FQD13N10LTF |