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Part Details for FQD13N10LTM by onsemi
Overview of FQD13N10LTM by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQD13N10LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31Y1523
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Newark | Mosfet, N Ch, 100V, 10A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQD13N10LTM Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 10697 |
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$0.3600 / $0.7860 | Buy Now |
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DISTI #
82C4018
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Newark | Transistor,mosfet,n-Channel,100V V(Br)Dss,10A I(D),to-263Ab Rohs Compliant: Yes |Onsemi FQD13N10LTM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2410 / $0.3210 | Buy Now |
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DISTI #
FQD13N10LTMCT-ND
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DigiKey | MOSFET N-CH 100V 10A DPAK Min Qty: 1 Lead time: 34 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3680 In Stock |
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$0.2328 / $0.7100 | Buy Now |
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DISTI #
FQD13N10LTM
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD13N10LTM) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 34 Weeks, 0 Days Container: Reel | 0 |
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$0.2495 / $0.2793 | Buy Now |
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DISTI #
FQD13N10LTM
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD13N10LTM) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 34 Weeks, 0 Days Container: Reel | 0 |
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$0.2495 / $0.2793 | Buy Now |
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DISTI #
512-FQD13N10LTM
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Mouser Electronics | MOSFET 100V N-Ch QFET Logic Level RoHS: Compliant | 327270 |
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$0.2380 / $0.7100 | Buy Now |
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Future Electronics | N-Channel 100 V 10 A 180 mOhm QFET® Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 37500Reel |
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$0.2300 / $0.2450 | Buy Now |
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Future Electronics | N-Channel 100 V 10 A 180 mOhm QFET® Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 25000Reel |
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$0.2300 / $0.2450 | Buy Now |
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Bristol Electronics | 3844 |
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RFQ | ||
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Rochester Electronics | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, N-Channel MOSFE, TO-252 RoHS: Compliant Status: Active Min Qty: 1 | 1931 |
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$0.2308 / $0.2715 | Buy Now |
Part Details for FQD13N10LTM
FQD13N10LTM CAD Models
FQD13N10LTM Part Data Attributes
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FQD13N10LTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD13N10LTM
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, DPAK, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 65 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 95 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD13N10LTM
This table gives cross-reference parts and alternative options found for FQD13N10LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD13N10LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD13N10LTF | 10A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FQD13N10LTM vs FQD13N10LTF |
| FQD13N10L | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N10LTM vs FQD13N10L |
| FQD13N10LTF | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N10LTM vs FQD13N10LTF |