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Power MOSFET, N-Channel, QFET®, 100 V, 10 A, 180 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82C4019
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Newark | Transistor, mosfet, n-Channel,100V V(Br)Dss,10A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FQD13N10TM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3090 / $0.4120 | Buy Now |
DISTI #
FQD13N10TM
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD13N10TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel | 92500 Factory Stock |
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$0.2817 / $0.3404 | Buy Now |
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Bristol Electronics | 3561 |
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RFQ | ||
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Ameya Holding Limited | N-Channel 100 V 0.18 Ohm 16 nC Surface Mount Mosfet - TO-252-3 | 576 |
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RFQ | |
DISTI #
FQD13N10TM
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 | 0 |
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$0.3000 | Buy Now |
DISTI #
FQD13N10TM
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Avnet Asia | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R (Alt: FQD13N10TM) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days | 0 |
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$0.2817 / $0.3150 | Buy Now |
DISTI #
FQD13N10TM
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Avnet Silica | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R (Alt: FQD13N10TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
FQD13N10TM
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EBV Elektronik | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R (Alt: FQD13N10TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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FQD13N10TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD13N10TM
onsemi
Power MOSFET, N-Channel, QFET®, 100 V, 10 A, 180 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 / TO-252-3 | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 95 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |