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Transistors / Power Field-Effect Transistors / FQD16N25CTM
Datasheets
FQD16N25CTM by:

Power MOSFET, N-Channel, QFET®, 250 V, 16 A, 270 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL

Part Details for FQD16N25CTM by onsemi

Results Overview of FQD16N25CTM by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

FQD16N25CTM Information

FQD16N25CTM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQD16N25CTM

Part # Distributor Description Stock Price Buy
DISTI # 75M2471
Newark N Channel Mosfet, 250V, 16A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQD16N25CTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 17291
  • 1 $1.4400
  • 10 $0.9840
  • 100 $0.7020
  • 500 $0.5770
  • 1,000 $0.5550
$0.5550 / $1.4400 Buy Now
DISTI # 87X8792
Newark Mosfet Transistor, N Channel, 16 A, 250 V, 220 Mohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FQD16N25CTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 9247
  • 1 $1.5700
  • 10 $1.1200
  • 100 $0.8360
  • 500 $0.7100
  • 1,000 $0.6880
$0.6880 / $1.5700 Buy Now
DISTI # 04M9364
Newark Mosfet (Metal-Oxide-Semiconductor Field-Effect Transistor) Rohs Compliant: Yes |Onsemi FQD16N25CTM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.5910
  • 3,000 $0.5780
  • 6,000 $0.5330
  • 12,000 $0.4990
  • 18,000 $0.4640
  • 30,000 $0.4440
$0.4440 / $0.5910 Buy Now
DISTI # 75M2471
Avnet Americas Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 75M2471) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 71 Weeks, 4 Days Container: Ammo Pack 16241 Partner Stock
  • 1 $1.4400
  • 10 $0.9840
  • 100 $0.7020
  • 500 $0.5770
  • 1,000 $0.5550
$0.5550 / $1.4400 Buy Now
DISTI # 87X8792
Avnet Americas Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: 87X8792) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 1728 Partner Stock
  • 1 $1.4800
  • 10 $1.0300
  • 100 $0.7450
  • 500 $0.6190
  • 1,000 $0.5970
$0.5970 / $1.4800 Buy Now
DISTI # FQD16N25CTM
Avnet Americas Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD16N25CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4190
  • 5,000 $0.4140
  • 10,000 $0.4091
  • 15,000 $0.4071
  • 20,000 $0.4042
$0.4042 / $0.4190 Buy Now
Rochester Electronics Power Field-Effect Transistor, 16A, 250V, 0.27ohm, N-Channel, MOSFET, TO-252 RoHS: Not Compliant Status: Active Min Qty: 1 967
  • 1 $0.4772
  • 25 $0.4677
  • 100 $0.4486
  • 500 $0.4295
  • 1,000 $0.4056
$0.4056 / $0.4772 Buy Now
DISTI # FQD16N25CTM
TME Transistor: N-MOSFET, unipolar, 250V, 10.1A, 160W, DPAK Min Qty: 1 0
  • 1 $1.0360
  • 10 $0.8490
  • 100 $0.6390
  • 500 $0.5280
  • 1,000 $0.4930
$0.4930 / $1.0360 RFQ
DISTI # FQD16N25CTM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.4300
$0.4300 Buy Now
DISTI # FQD16N25CTM
Avnet Asia Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R (Alt: FQD16N25CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days 0
  • 2,500 $0.4909
  • 5,000 $0.4581
  • 7,500 $0.4462
  • 12,500 $0.4349
  • 25,000 $0.4242
  • 62,500 $0.4140
  • 125,000 $0.4042
$0.4042 / $0.4909 Buy Now
DISTI # FQD16N25CTM
Avnet Silica Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R (Alt: FQD16N25CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 9
RFQ
DISTI # FQD16N25CTM
EBV Elektronik Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R (Alt: FQD16N25CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
LCSC 250V 16A 0.2710V8A 160W 4V250uA 1 N-channel TO-252(DPAK) MOSFETs ROHS 863
  • 1 $1.1631
  • 10 $0.9825
  • 30 $0.8846
  • 100 $0.6841
  • 500 $0.6351
  • 1,000 $0.6122
$0.6122 / $1.1631 Buy Now

Part Details for FQD16N25CTM

FQD16N25CTM CAD Models

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FQD16N25CTM Part Data Attributes

Parametric Data
FQD16N25CTM onsemi
Buy Now Datasheet
Compare Parts:
FQD16N25CTM onsemi Power MOSFET, N-Channel, QFET®, 250 V, 16 A, 270 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3 / TO-252-3
Package Description DPAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer onsemi
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 432 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 64 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FQD16N25CTM Related Parts

FQD16N25CTM Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the FQD16N25CTM can withstand is 150°C.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.

  • The recommended gate drive voltage for the FQD16N25CTM is between 10V and 15V, with a maximum of 20V.

  • Yes, the FQD16N25CTM is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive voltage is optimized for the specific application.

  • To protect the FQD16N25CTM from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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