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Power MOSFET, N-Channel, QFET®, 250 V, 16 A, 270 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
75M2471
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Newark | N Channel Mosfet, 250V, 16A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQD16N25CTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 17291 |
|
$0.5550 / $1.2900 | Buy Now |
DISTI #
87X8792
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Newark | Mosfet Transistor, N Channel, 16 A, 250 V, 220 Mohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FQD16N25CTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 9247 |
|
$0.5970 / $1.3300 | Buy Now |
DISTI #
04M9364
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Newark | Mosfet (Metal-Oxide-Semiconductor Field-Effect Transistor) Rohs Compliant: Yes |Onsemi FQD16N25CTM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4440 / $0.5910 | Buy Now |
DISTI #
75M2471
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Avnet Americas | Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 75M2471) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 71 Weeks, 4 Days Container: Ammo Pack | 17241 Partner Stock |
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$0.5740 / $1.2900 | Buy Now |
DISTI #
87X8792
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Avnet Americas | Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: 87X8792) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 1728 Partner Stock |
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$0.6170 / $1.3300 | Buy Now |
DISTI #
FQD16N25CTM
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Avnet Americas | Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD16N25CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$0.4042 / $0.4190 | Buy Now |
DISTI #
FQD16N25CTM
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Avnet Americas | Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD16N25CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.4041 / $0.4192 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 16A, 250V, 0.27ohm, N-Channel, MOSFET, TO-252 RoHS: Not Compliant Status: Active Min Qty: 1 | 967 |
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$0.4056 / $0.4772 | Buy Now |
DISTI #
FQD16N25CTM
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TME | Transistor: N-MOSFET, unipolar, 250V, 10.1A, 160W, DPAK Min Qty: 1 | 0 |
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$0.5110 / $1.0750 | RFQ |
DISTI #
FQD16N25CTM
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 | 0 |
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$0.4300 | Buy Now |
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FQD16N25CTM
onsemi
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Datasheet
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Compare Parts:
FQD16N25CTM
onsemi
Power MOSFET, N-Channel, QFET®, 250 V, 16 A, 270 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 / TO-252-3 | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | onsemi | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 432 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.27 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 160 W | |
Pulsed Drain Current-Max (IDM) | 64 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |