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Part Details for FQD17P06TM by onsemi
Overview of FQD17P06TM by onsemi
- Distributor Offerings: (33 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQD17P06TM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
15R3444
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Newark | P Channel Mosfet, -60V, 12Ma, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, No. Of Pins:3Pinsrohs Compliant: Yes |Onsemi FQD17P06TM Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2320 |
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$0.5990 / $1.0800 | Buy Now |
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DISTI #
84Y9965
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Newark | Mosfet, P-Channel, -60V, -12A, To-252-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-12A, Drain Source Voltage Vds:-60V, On Resistance Rds(On):0.11Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Power Rohs Compliant: Yes |Onsemi FQD17P06TM Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.6310 / $1.1000 | Buy Now |
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DISTI #
82C4027
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Newark | P Channel Mosfet, -60V, 12Ma, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:12Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQD17P06TM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3870 / $0.5240 | Buy Now |
|
DISTI #
FQD17P06TMCT-ND
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DigiKey | MOSFET P-CH 60V 12A DPAK Min Qty: 1 Lead time: 34 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
19145 In Stock |
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$0.3804 / $1.0100 | Buy Now |
|
DISTI #
FQD17P06TM
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Avnet Americas | Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD17P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 34 Weeks, 0 Days Container: Reel | 118 Factory Stock |
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$0.4078 / $0.4565 | Buy Now |
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DISTI #
FQD17P06TM
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Avnet Americas | Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD17P06TM) RoHS: Compliant Container: Reel | 0 |
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RFQ | |
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DISTI #
FQD17P06TM
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Avnet Americas | Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD17P06TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 34 Weeks, 0 Days Container: Reel | 0 |
|
$0.4078 / $0.4565 | Buy Now |
|
DISTI #
15R3444
|
Avnet Americas | Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 15R3444) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 53 Weeks, 6 Days Container: Ammo Pack | 2320 Partner Stock |
|
$0.7010 / $1.0800 | Buy Now |
|
DISTI #
512-FQD17P06TM
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Mouser Electronics | MOSFET 60V P-Channel QFET RoHS: Compliant | 41554 |
|
$0.3810 / $0.9500 | Buy Now |
|
DISTI #
V72:2272_06339647
|
Arrow Electronics | Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 34 Weeks Date Code: 2408 Container: Cut Strips | Americas - 1702 |
|
$0.3902 / $0.8350 | Buy Now |
Part Details for FQD17P06TM
FQD17P06TM CAD Models
FQD17P06TM Part Data Attributes:
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|
FQD17P06TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD17P06TM
onsemi
Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, DPAK, 2500-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 3 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 44 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD17P06TM
This table gives cross-reference parts and alternative options found for FQD17P06TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD17P06TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD17P06TF_NL | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | FQD17P06TM vs FQD17P06TF_NL |
| FQD17P06TF | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD17P06TM vs FQD17P06TF |
| FQD17P06TM | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD17P06TM vs FQD17P06TM |
| FQD17P06 | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD17P06TM vs FQD17P06 |