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Part Details for FQD19N10LTM by onsemi
Overview of FQD19N10LTM by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQD19N10LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31Y1525
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Newark | Mosfet, N Ch, 100V, 15.6A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:15.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQD19N10LTM Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 9839 |
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$0.5430 / $1.1400 | Buy Now |
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DISTI #
27AC5828
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Newark | Qf 100V 100Mohm L Dpak Rohs Compliant: Yes |Onsemi FQD19N10LTM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3790 / $0.4520 | Buy Now |
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DISTI #
82C4028
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Newark | Transistor,mosfet,n-Channel,100V V(Br)Dss,15.6A I(D),to-263Ab Rohs Compliant: Yes |Onsemi FQD19N10LTM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3940 / $0.5250 | Buy Now |
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DISTI #
FQD19N10LTMCT-ND
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DigiKey | MOSFET N-CH 100V 15.6A DPAK Min Qty: 1 Lead time: 34 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3115 In Stock |
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$0.3814 / $1.0200 | Buy Now |
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DISTI #
FQD19N10LTM
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Avnet Americas | Trans MOSFET N-CH 100V 15.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD19N10LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 34 Weeks, 0 Days Container: Reel | 0 |
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$0.4088 / $0.4577 | Buy Now |
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DISTI #
512-FQD19N10LTM
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Mouser Electronics | MOSFET 100V N-Ch QFET Logic Level RoHS: Compliant | 56357 |
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$0.4360 / $1.0200 | Buy Now |
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Future Electronics | N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.3850 / $0.4100 | Buy Now |
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Future Electronics | N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.3850 / $0.4100 | Buy Now |
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DISTI #
FQD19N10LTM
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Avnet Americas | Trans MOSFET N-CH 100V 15.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD19N10LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 34 Weeks, 0 Days Container: Reel | 0 |
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$0.4088 / $0.4577 | Buy Now |
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DISTI #
FQD19N10LTM
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TME | Transistor: N-MOSFET, unipolar, 100V, 9.8A, 50W, DPAK Min Qty: 1 | 2341 |
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$0.5230 / $1.3640 | Buy Now |
Part Details for FQD19N10LTM
FQD19N10LTM CAD Models
FQD19N10LTM Part Data Attributes
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FQD19N10LTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD19N10LTM
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 15.6 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 62.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD19N10LTM
This table gives cross-reference parts and alternative options found for FQD19N10LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD19N10LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD19N10LTM | Power Field-Effect Transistor, 15.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD19N10LTM vs FQD19N10LTM |