Datasheets
FQD2N100TM by:

Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

Part Details for FQD2N100TM by Fairchild Semiconductor Corporation

Overview of FQD2N100TM by Fairchild Semiconductor Corporation

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Price & Stock for FQD2N100TM

Part # Distributor Description Stock Price Buy
Bristol Electronics   106
RFQ
Bristol Electronics   2035
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 1.6A I(D), 1000V, 9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 93
  • 1 $5.7576
  • 19 $3.8384
  • 66 $3.5505
$3.5505 / $5.7576 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 1.6A I(D), 1000V, 9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 2719
  • 1 $3.0000
  • 433 $1.2375
  • 809 $1.1250
$1.1250 / $3.0000 Buy Now
Sense Electronic Company Limited TO-252 1698
RFQ
Win Source Electronics MOSFET N-CH 1000V 1.6A DPAK / Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R 129965
  • 40 $1.4130
  • 90 $1.1600
  • 135 $1.1240
  • 185 $1.0870
  • 240 $1.0510
  • 320 $0.9420
$0.9420 / $1.4130 Buy Now

Part Details for FQD2N100TM

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FQD2N100TM Part Data Attributes

FQD2N100TM Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQD2N100TM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 160 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 1.6 A
Drain-source On Resistance-Max 9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 6.4 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQD2N100TM

This table gives cross-reference parts and alternative options found for FQD2N100TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD2N100TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD2N100TM Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK, 2500-REEL onsemi FQD2N100TM vs FQD2N100TM
FQD2N100TM 1.6A, 1000V, 9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 Rochester Electronics LLC FQD2N100TM vs FQD2N100TM
FQD2N100TF Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD2N100TM vs FQD2N100TF
Part Number Description Manufacturer Compare
FQD2N100TM Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK, 2500-REEL onsemi FQD2N100TM vs FQD2N100TM
FQD2N100TF Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD2N100TM vs FQD2N100TF
FQD2N100TM 1.6A, 1000V, 9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 Rochester Electronics LLC FQD2N100TM vs FQD2N100TM

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