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Part Details for FQD2N100TM by onsemi
Overview of FQD2N100TM by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQD2N100TM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
28H9904
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Newark | Mosfet, N Ch, 1Kv, 1.6A, 7.1 Ohm, To-252, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:1.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQD2N100TM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
15R3445
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Newark | N Channel Mosfet, 1Kv, 1.6Ma, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:1.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Product Range:- Rohs Compliant: Yes |Onsemi FQD2N100TM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.4900 | Buy Now |
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DISTI #
2832-FQD2N100TM-ND
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DigiKey | MOSFET N-CH 1000V 1.6A DPAK Min Qty: 1 Lead time: 99 Weeks Container: Bulk MARKETPLACE PRODUCT |
12500 In Stock |
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$0.7900 | Buy Now |
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DISTI #
FQD2N100TMCT-ND
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DigiKey | MOSFET N-CH 1000V 1.6A DPAK Min Qty: 1 Lead time: 99 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
FQD2N100TM
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Avnet Americas | Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N100TM) RoHS: Compliant Min Qty: 848 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 12500 Partner Stock |
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$0.7316 / $0.8732 | Buy Now |
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DISTI #
FQD2N100TM
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Avnet Americas | Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N100TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 47 Weeks, 5 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
FQD2N100TM
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Avnet Americas | Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N100TM) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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RFQ | |
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DISTI #
512-FQD2N100TM
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Mouser Electronics | MOSFET 1000V N-Channel QFET RoHS: Compliant | 0 |
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$0.4520 / $1.0400 | Order Now |
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Bristol Electronics | Min Qty: 3 | 61 |
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$1.1250 / $1.8000 | Buy Now |
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Bristol Electronics | 1530 |
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RFQ |
Part Details for FQD2N100TM
FQD2N100TM CAD Models
FQD2N100TM Part Data Attributes
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FQD2N100TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD2N100TM
onsemi
Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks, 6 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 1.6 A | |
| Drain-source On Resistance-Max | 9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 6.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD2N100TM
This table gives cross-reference parts and alternative options found for FQD2N100TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD2N100TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD2N100TM | Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | FQD2N100TM vs FQD2N100TM |
| FQD2N100TM | 1.6A, 1000V, 9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 | Rochester Electronics LLC | FQD2N100TM vs FQD2N100TM |
| FQD2N100TF | Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD2N100TM vs FQD2N100TF |