Datasheets
FQD2N60CTM by:

Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

Part Details for FQD2N60CTM by Fairchild Semiconductor Corporation

Results Overview of FQD2N60CTM by Fairchild Semiconductor Corporation

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FQD2N60CTM Information

FQD2N60CTM by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQD2N60CTM

Part # Distributor Description Stock Price Buy
Rochester Electronics Power Field-Effect Transistor, 1.9A, 600V, 4.7ohm, N-Channel, MOSFET, TO-252 RoHS: Not Compliant Status: Active Min Qty: 1 22
  • 1 $0.3239
  • 25 $0.3174
  • 100 $0.3045
  • 500 $0.2915
  • 1,000 $0.2753
$0.2753 / $0.3239 Buy Now
Win Source Electronics MOSFET N-CH 600V 1.9A DPAK 232324
  • 150 $0.3421
  • 315 $0.3201
  • 490 $0.3090
  • 700 $0.2870
  • 910 $0.2759
  • 1,135 $0.2649
$0.2649 / $0.3421 Buy Now

Part Details for FQD2N60CTM

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FQD2N60CTM Part Data Attributes

FQD2N60CTM Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQD2N60CTM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 4.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 44 W
Pulsed Drain Current-Max (IDM) 7.6 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FQD2N60CTM Related Parts

FQD2N60CTM Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FQD2N60CTM is -55°C to 150°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 0V and 600V.

  • The recommended gate resistor value for the FQD2N60CTM is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.

  • To protect the FQD2N60CTM from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package.

  • The maximum allowable current for the FQD2N60CTM is 2A, but this value may be derated depending on the operating temperature and other factors.

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