Datasheets
FQD2N60CTM by:

Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK, DPAK-3 / TO-252-3, 2500-REEL

Part Details for FQD2N60CTM by onsemi

Results Overview of FQD2N60CTM by onsemi

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FQD2N60CTM Information

FQD2N60CTM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQD2N60CTM

Part # Distributor Description Stock Price Buy
DISTI # 31Y1527
Newark Mosfet, N-Ch, 600V, 1.9A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:1.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQD2N60CTM RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # FQD2N60CTM
Avnet Americas Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days Container: Reel 5000
  • 2,500 $0.2484
$0.2484 Buy Now
DISTI # FQD2N60CTM
Avnet Americas Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.2484
$0.2484 Buy Now
DISTI # FQD2N60CTM
Avnet Americas Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.2484
$0.2484 Buy Now
Bristol Electronics   2500
RFQ
DISTI # FQD2N60CTM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.2800
$0.2800 Buy Now
DISTI # FQD2N60CTM
Avnet Asia Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days 0
  • 2,500 $0.2700
  • 5,000 $0.2692
  • 7,500 $0.2685
  • 12,500 $0.2677
  • 25,000 $0.2654
$0.2654 / $0.2700 Buy Now
DISTI # FQD2N60CTM
Avnet Silica Trans MOSFET NCH 600V 19A 3Pin2Tab DPAK TR (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Silica - 50000
Buy Now
DISTI # FQD2N60CTM
EBV Elektronik Trans MOSFET NCH 600V 19A 3Pin2Tab DPAK TR (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days EBV - 2500
Buy Now
LCSC 600V 1.9A 2.5W 4.710V0.95A 4V 1 N-channel TO-252(DPAK) MOSFETs ROHS 898
  • 1 $0.4774
  • 10 $0.3845
  • 30 $0.3380
  • 100 $0.3032
  • 500 $0.2753
  • 1,000 $0.2613
$0.2613 / $0.4774 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $0.5306
$0.5306 Buy Now

Part Details for FQD2N60CTM

FQD2N60CTM Part Data Attributes

FQD2N60CTM onsemi
Buy Now Datasheet
Compare Parts:
FQD2N60CTM onsemi Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3 / TO-252-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 4.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 44 W
Pulsed Drain Current-Max (IDM) 7.6 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQD2N60CTM

This table gives cross-reference parts and alternative options found for FQD2N60CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD2N60CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQD2N60CTM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 FQD2N60CTM vs FQD2N60CTM

FQD2N60CTM Related Parts

FQD2N60CTM Frequently Asked Questions (FAQ)

  • The recommended gate resistor value for FQD2N60CTM is typically in the range of 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.

  • To ensure proper cooling, make sure to provide adequate heat sinking, such as a heat sink or thermal pad, and ensure good thermal contact between the device and the heat sink. Additionally, consider the thermal resistance of the device and the maximum junction temperature.

  • The maximum allowed voltage transient for FQD2N60CTM is typically 80% of the maximum rated voltage, which is 600V for this device. However, it's recommended to consult the datasheet and application notes for specific guidance.

  • Yes, FQD2N60CTM is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the device is properly driven and cooled.

  • To protect the FQD2N60CTM from overvoltage and overcurrent, consider using a voltage clamp or surge protector, and implement overcurrent protection using a current sense resistor and a protection circuit.

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