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Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQD2N60CTM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y1527
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Newark | Mosfet, N-Ch, 600V, 1.9A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:1.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQD2N60CTM RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
FQD2N60CTM
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Avnet Americas | Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days Container: Reel | 5000 |
|
$0.2484 | Buy Now |
DISTI #
FQD2N60CTM
|
Avnet Americas | Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days Container: Reel | 0 |
|
$0.2484 | Buy Now |
DISTI #
FQD2N60CTM
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Avnet Americas | Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days Container: Reel | 0 |
|
$0.2484 | Buy Now |
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Bristol Electronics | 2500 |
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RFQ | ||
DISTI #
FQD2N60CTM
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 | 0 |
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$0.2800 | Buy Now |
DISTI #
FQD2N60CTM
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Avnet Asia | Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days | 0 |
|
$0.2654 / $0.2700 | Buy Now |
DISTI #
FQD2N60CTM
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Avnet Silica | Trans MOSFET NCH 600V 19A 3Pin2Tab DPAK TR (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days | Silica - 50000 |
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Buy Now | |
DISTI #
FQD2N60CTM
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EBV Elektronik | Trans MOSFET NCH 600V 19A 3Pin2Tab DPAK TR (Alt: FQD2N60CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | EBV - 2500 |
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Buy Now | |
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LCSC | 600V 1.9A 2.5W 4.710V0.95A 4V 1 N-channel TO-252(DPAK) MOSFETs ROHS | 898 |
|
$0.2613 / $0.4774 | Buy Now |
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FQD2N60CTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD2N60CTM
onsemi
Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK, DPAK-3 / TO-252-3, 2500-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 / TO-252-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 1.9 A | |
Drain-source On Resistance-Max | 4.7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 44 W | |
Pulsed Drain Current-Max (IDM) | 7.6 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQD2N60CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD2N60CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FQD2N60CTM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | FQD2N60CTM vs FQD2N60CTM |