Datasheets
FQD4P40TM by:

Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Part Details for FQD4P40TM by Fairchild Semiconductor Corporation

Overview of FQD4P40TM by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FQD4P40TM

Part # Distributor Description Stock Price Buy
Quest Components   2072
  • 1 $10.3500
  • 158 $5.6925
  • 352 $5.1750
$5.1750 / $10.3500 Buy Now
Chip1Cloud MOSFET P-CH 400V 2.7A DPAK 32900
RFQ
Perfect Parts Corporation   6012
RFQ
Win Source Electronics MOSFET P-CH 400V 2.7A DPAK 68000
  • 21 $2.4030
  • 51 $1.9710
  • 79 $1.9100
  • 109 $1.8480
  • 140 $1.7870
  • 188 $1.6020
$1.6020 / $2.4030 Buy Now

Part Details for FQD4P40TM

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FQD4P40TM Part Data Attributes

FQD4P40TM Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQD4P40TM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 260 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 3.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 10.8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQD4P40TM

This table gives cross-reference parts and alternative options found for FQD4P40TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD4P40TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD4P40 Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD4P40TM vs FQD4P40
FQD4P40TF Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD4P40TM vs FQD4P40TF
FQD4P40TM Power MOSFET, P-Channel, QFET®, -400 V, -2.7 A, 3.1 Ω, DPAK, 2500-REEL onsemi FQD4P40TM vs FQD4P40TM
Part Number Description Manufacturer Compare
FQD4P40 Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD4P40TM vs FQD4P40
FQD4P40TF Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD4P40TM vs FQD4P40TF
FQD4P40TM Power MOSFET, P-Channel, QFET®, -400 V, -2.7 A, 3.1 Ω, DPAK, 2500-REEL onsemi FQD4P40TM vs FQD4P40TM

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