Part Details for FQD60N03LTM by Fairchild Semiconductor Corporation
Overview of FQD60N03LTM by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for FQD60N03LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2156-FQD60N03LTM-ND
|
DigiKey | N-CHANNEL POWER MOSFET Min Qty: 503 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
10000 In Stock |
|
$0.6000 | Buy Now |
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 1691 |
|
$0.4228 / $1.1532 | Buy Now |
|
|
Rochester Electronics | 40.3A, 30V, 0.024ohm, N-Channel Power MOSFET, TO-252 RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 10000 |
|
$0.5125 / $0.6029 | Buy Now |
Part Details for FQD60N03LTM
FQD60N03LTM CAD Models
FQD60N03LTM Part Data Attributes
|
|
FQD60N03LTM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FQD60N03LTM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 40.3A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 40.3 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 56 W | |
| Pulsed Drain Current-Max (IDM) | 161 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn85Pb15) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD60N03LTM
This table gives cross-reference parts and alternative options found for FQD60N03LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD60N03LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD60N03LTM | 40.3A, 30V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FQD60N03LTM vs FQD60N03LTM |