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Part Details for FQD6N25TM by onsemi
Overview of FQD6N25TM by onsemi
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FQD6N25TM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
54AH8754
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Newark | Mosfet, N-Ch, 250V, 4.4A, 150Deg C, 45W Rohs Compliant: Yes |Onsemi FQD6N25TM Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.3630 / $0.8500 | Buy Now |
|
DISTI #
82C4073
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Newark | Transistor,mosfet,n-Channel,250V V(Br)Dss,4.4A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FQD6N25TM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
|
DISTI #
FQD6N25TM
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TME | Transistor: N-MOSFET, unipolar, 250V, 2.6A, Idm: 17.6A, 45W, DPAK Min Qty: 1 | 0 |
|
$0.3730 / $0.9390 | RFQ |
|
DISTI #
3368807
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element14 Asia-Pacific | MOSFET, N-CH, 250V, 4.4A, 150DEG C, 45W RoHS: Compliant Min Qty: 5 Container: Cut Tape | 0 |
|
$0.4207 / $0.5630 | Buy Now |
|
DISTI #
3368807RL
|
element14 Asia-Pacific | MOSFET, N-CH, 250V, 4.4A, 150DEG C, 45W RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
|
$0.4207 | Buy Now |
|
DISTI #
3368807RL
|
Farnell | MOSFET, N-CH, 250V, 4.4A, 150DEG C, 45W RoHS: Compliant Min Qty: 100 Lead time: 14 Weeks, 1 Days Container: Reel | 0 |
|
$0.3413 / $0.6337 | Buy Now |
|
DISTI #
3368807
|
Farnell | MOSFET, N-CH, 250V, 4.4A, 150DEG C, 45W RoHS: Compliant Min Qty: 5 Lead time: 14 Weeks, 1 Days Container: Cut Tape | 0 |
|
$0.3413 / $0.9386 | Buy Now |
Part Details for FQD6N25TM
FQD6N25TM CAD Models
FQD6N25TM Part Data Attributes:
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|
FQD6N25TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD6N25TM
onsemi
Power MOSFET, N-Channel, QFET®, 250 V, 4.4 A, 1 Ω, DPAK, 2500-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 31 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 75 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 4.4 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 17.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD6N25TM
This table gives cross-reference parts and alternative options found for FQD6N25TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD6N25TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD6N25TF | Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD6N25TM vs FQD6N25TF |
| FQD6N25 | Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD6N25TM vs FQD6N25 |
| FQD6N25TM | Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | FQD6N25TM vs FQD6N25TM |