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Part Details for FQD7N10LTM by onsemi
Overview of FQD7N10LTM by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQD7N10LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82C4081
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Newark | Transistor,mosfet,n-Channel,100V V(Br)Dss,5.8A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FQD7N10LTM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
31Y1530
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Newark | Mosfet Transistor, N Channel, 5.8 A, 100 V, 0.275 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi FQD7N10LTM Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 5.8A, 100V, 0.38ohm, N-Channel, MOSFET, TO-252 RoHS: Compliant Status: Obsolete Min Qty: 1 | 1176 |
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$0.2054 / $0.2416 | Buy Now |
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ComSIT USA | 100V LOGIC N-CHANNEL MOSFET Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | Europe - 6255 |
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RFQ | |
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DISTI #
2453435RL
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element14 Asia-Pacific | MOSFET, N CH, 100V, 5.8A, TO-252AA-3 RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$0.3457 | Buy Now |
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DISTI #
2453435
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element14 Asia-Pacific | MOSFET, N CH, 100V, 5.8A, TO-252AA-3 RoHS: Compliant Min Qty: 5 Container: Cut Tape | 0 |
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$0.3457 / $0.4631 | Buy Now |
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DISTI #
2453435
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Farnell | MOSFET, N CH, 100V, 5.8A, TO-252AA-3 RoHS: Compliant Min Qty: 5 Lead time: 46 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.3147 / $0.8315 | Buy Now |
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DISTI #
2453435RL
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Farnell | MOSFET, N CH, 100V, 5.8A, TO-252AA-3 RoHS: Compliant Min Qty: 100 Lead time: 46 Weeks, 1 Days Container: Reel | 0 |
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$0.3147 / $0.4929 | Buy Now |
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Flip Electronics | Stock | 66000 |
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RFQ |
Part Details for FQD7N10LTM
FQD7N10LTM CAD Models
FQD7N10LTM Part Data Attributes
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FQD7N10LTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD7N10LTM
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 5.8 A, 350 mΩ, DPAK, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 23 Weeks, 4 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 5.8 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 23.2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |