Part Details for FQH44N10-F133 by onsemi
Overview of FQH44N10-F133 by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| HD6417705F133BV | Renesas Electronics Corporation | 32-bit Microcontrollers | |
| UPD70F3102AF1-33-FAA-A | Renesas Electronics Corporation | 32-bit Microcontrollers (Non Promotion), LFBGA, / | |
| D6417709SF133BV | Renesas Electronics Corporation | 32-bit Microcontrollers |
Price & Stock for FQH44N10-F133
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
54AH8758
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Newark | Mosfet, N-Ch, 100V, 48A, 175Deg C, 180W Rohs Compliant: Yes |Onsemi FQH44N10-F133 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.4900 / $3.0200 | Buy Now |
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DISTI #
FQH44N10-F133
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Avnet Americas | Trans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: FQH44N10-F133) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Bulk | 10 Partner Stock |
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RFQ | |
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Rochester Electronics | FQH44N10 - N-Channel QFETMOSFET 100V, 48A, 39m RoHS: Compliant Status: Obsolete Min Qty: 1 | 10 |
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$1.2100 / $1.4300 | Buy Now |
Part Details for FQH44N10-F133
FQH44N10-F133 CAD Models
FQH44N10-F133 Part Data Attributes
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FQH44N10-F133
onsemi
Buy Now
Datasheet
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Compare Parts:
FQH44N10-F133
onsemi
Power MOSFET, N-Channel, QFET®, 100 V, 48 A, 39 mΩ, TO-247, TO-247 3L, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-247 3L | |
| Package Description | TO-247AB, 3 PIN | |
| Manufacturer Package Code | 340CK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 530 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 48 A | |
| Drain-source On Resistance-Max | 0.039 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 192 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQH44N10-F133
This table gives cross-reference parts and alternative options found for FQH44N10-F133. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQH44N10-F133, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTH40N10 | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Motorola Mobility LLC | FQH44N10-F133 vs MTH40N10 |
| SMW60N10 | Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Vishay Siliconix | FQH44N10-F133 vs SMW60N10 |
| RFG40N10 | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | FQH44N10-F133 vs RFG40N10 |
| SGSP472 | 35A, 80V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | FQH44N10-F133 vs SGSP472 |
| STW60N10 | 60A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | FQH44N10-F133 vs STW60N10 |
| MTW45N10E | 45A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN | onsemi | FQH44N10-F133 vs MTW45N10E |
| IRFP150NPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | Infineon Technologies AG | FQH44N10-F133 vs IRFP150NPBF |
| MTH25N08 | 25A, 80V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Motorola Mobility LLC | FQH44N10-F133 vs MTH25N08 |
| IRF1310N | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | FQH44N10-F133 vs IRF1310N |
| RFG40N10 | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | FQH44N10-F133 vs RFG40N10 |