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Overview of FQI16N25CTU by Rochester Electronics LLC
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for FQI16N25CTU by Rochester Electronics LLC
Part Data Attributes for FQI16N25CTU by Rochester Electronics LLC
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Pbfree Code
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Yes
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Rohs Code
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Yes
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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ROCHESTER ELECTRONICS LLC
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Package Description
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I2PAK-3
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Pin Count
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3
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Reach Compliance Code
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unknown
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Avalanche Energy Rating (Eas)
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410 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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250 V
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Drain Current-Max (ID)
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15.6 A
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Drain-source On Resistance-Max
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0.27 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-PSIP-T3
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JESD-609 Code
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e3
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Moisture Sensitivity Level
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NOT APPLICABLE
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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IN-LINE
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Peak Reflow Temperature (Cel)
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NOT APPLICABLE
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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62.4 A
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Qualification Status
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COMMERCIAL
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Surface Mount
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NO
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Terminal Finish
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MATTE TIN
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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NOT APPLICABLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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