Part Details for FQI2N90TU by Rochester Electronics LLC
Overview of FQI2N90TU by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQI2N90TU
FQI2N90TU CAD Models
FQI2N90TU Part Data Attributes
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FQI2N90TU
Rochester Electronics LLC
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Datasheet
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FQI2N90TU
Rochester Electronics LLC
2.2A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-262AA | |
| Package Description | I2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 170 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 2.2 A | |
| Drain-source On Resistance-Max | 7.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 8.8 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | NOT SPECIFIED | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQI2N90TU
This table gives cross-reference parts and alternative options found for FQI2N90TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQI2N90TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQI2N90 | Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor Corporation | FQI2N90TU vs FQI2N90 |
| FQI2N90TU | Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor Corporation | FQI2N90TU vs FQI2N90TU |