Part Details for FQI4N20 by Fairchild Semiconductor Corporation
Overview of FQI4N20 by Fairchild Semiconductor Corporation
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Smart Cities
Energy and Power Systems
Renewable Energy
Price & Stock for FQI4N20
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 3.6A, 200V, 1.4ohm, N-Channel Power MOSFET, TO-262AA RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 950 |
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$0.2036 / $0.2395 | Buy Now |
Part Details for FQI4N20
FQI4N20 CAD Models
FQI4N20 Part Data Attributes
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FQI4N20
Fairchild Semiconductor Corporation
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Datasheet
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FQI4N20
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-262AA | |
| Package Description | I2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 52 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.6 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 14.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQI4N20
This table gives cross-reference parts and alternative options found for FQI4N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQI4N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQI4N20TU | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor Corporation | FQI4N20 vs FQI4N20TU |
| FQI4N20TU | 3.6A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | Rochester Electronics LLC | FQI4N20 vs FQI4N20TU |