Part Details for FQI8N60CTU by Fairchild Semiconductor Corporation
Overview of FQI8N60CTU by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for FQI8N60CTU
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FQI8N60CTU-ND
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DigiKey | POWER FIELD-EFFECT TRANSISTOR, 7 Min Qty: 254 Container: Bulk MARKETPLACE PRODUCT |
6985 In Stock |
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$1.1900 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 7.5A, 600V, 1.2ohm, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 25781 |
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$1.0100 / $1.1900 | Buy Now |
Part Details for FQI8N60CTU
FQI8N60CTU CAD Models
FQI8N60CTU Part Data Attributes
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FQI8N60CTU
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FQI8N60CTU
Fairchild Semiconductor Corporation
N-Channel QFET® MOSFET 600V, 7.5A, 1.2Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-262 | |
Package Description | ROHS COMPLIANT, I2PAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 3LD, TO262, JEDEC VARIATION AA (I2PAK) | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 7.5 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 147 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQI8N60CTU
This table gives cross-reference parts and alternative options found for FQI8N60CTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQI8N60CTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQI8N60CTU | Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, I2PAK, 1000-TUBE | onsemi | FQI8N60CTU vs FQI8N60CTU |
FQI8N60CTU | 7.5A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3 | Rochester Electronics LLC | FQI8N60CTU vs FQI8N60CTU |