Part Details for FQP2N60C by Fairchild Semiconductor Corporation
Overview of FQP2N60C by Fairchild Semiconductor Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for FQP2N60C
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | 2.0 A, 600 V N-CHANNEL MOSFET Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 150 |
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RFQ |
Part Details for FQP2N60C
FQP2N60C CAD Models
FQP2N60C Part Data Attributes
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FQP2N60C
Fairchild Semiconductor Corporation
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Datasheet
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FQP2N60C
Fairchild Semiconductor Corporation
N-Channel QFET® MOSFET 600V, 2A, 4.7Ω, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220 | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 4.7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 54 W | |
Pulsed Drain Current-Max (IDM) | 8 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQP2N60C
This table gives cross-reference parts and alternative options found for FQP2N60C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP2N60C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQP2N60 | Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP2N60C vs FQP2N60 |
FQP2N60 | 2.4A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | FQP2N60C vs FQP2N60 |