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Part Details for FQP2N60C by onsemi
Overview of FQP2N60C by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for FQP2N60C
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
97K0171
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Newark | Mosfet, N Channel, 600V, 2A, To-220-3, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:2A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Onsemi FQP2N60C Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 2A, 600V, 4.7ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 2248 |
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$0.5063 / $0.5957 | Buy Now |
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DISTI #
1095062
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.6500 / $1.6030 | Buy Now |
Part Details for FQP2N60C
FQP2N60C CAD Models
FQP2N60C Part Data Attributes
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FQP2N60C
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP2N60C
onsemi
Power MOSFET, N-Channel, QFET®, 600 V, 2 A, 4.7 Ω, TO-220, 1000-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-220, 3 PIN | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 4.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 54 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQP2N60C
This table gives cross-reference parts and alternative options found for FQP2N60C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP2N60C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQP2N60 | Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP2N60C vs FQP2N60 |
| FQP2N60 | 2.4A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | FQP2N60C vs FQP2N60 |
| FQP2N60C | N-Channel QFET® MOSFET 600V, 2A, 4.7Ω, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL | Fairchild Semiconductor Corporation | FQP2N60C vs FQP2N60C |