Datasheets
FQP34N20 by:

Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220, 1000-TUBE

Part Details for FQP34N20 by onsemi

Overview of FQP34N20 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for FQP34N20

Part # Distributor Description Stock Price Buy
DISTI # 81AC8734
Newark Qf 200V 75Mohm To220 Rohs Compliant: Yes |Onsemi FQP34N20 Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 10 $3.3900
  • 100 $2.8600
  • 500 $2.5900
  • 1,000 $2.2600
$2.2600 / $3.3900 Buy Now
DISTI # FQP34N20
TME Transistor: N-MOSFET, unipolar, 200V, 20A, 180W, TO220-3 Min Qty: 1 0
  • 1 $2.6400
  • 3 $2.3500
  • 10 $2.0800
  • 50 $1.8800
  • 250 $1.7400
$1.7400 / $2.6400 RFQ
Flip Electronics Stock 24000
RFQ
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 50 250
  • 100 $1.9600
  • 250 $1.8200
$1.8200 / $1.9600 Buy Now

Part Details for FQP34N20

FQP34N20 CAD Models

FQP34N20 Part Data Attributes:

FQP34N20 onsemi
Buy Now Datasheet
Compare Parts:
FQP34N20 onsemi Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description TO-220, 3 PIN
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 640 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 124 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQP34N20

This table gives cross-reference parts and alternative options found for FQP34N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP34N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQP34N20LJ69Z Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP34N20 vs FQP34N20LJ69Z
FQP34N20J69Z Power Field-Effect Transistor, 31A I(D), 200V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP34N20 vs FQP34N20J69Z
Part Number Description Manufacturer Compare
SFF250ZS Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) FQP34N20 vs SFF250ZS
SFF250ZTXV Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) FQP34N20 vs SFF250ZTXV
MTV32N20E-RL 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC FQP34N20 vs MTV32N20E-RL
IRF650AJ69Z Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP34N20 vs IRF650AJ69Z
SFF250ZUBTXV Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) FQP34N20 vs SFF250ZUBTXV
IRFI650B Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3 Fairchild Semiconductor Corporation FQP34N20 vs IRFI650B
SFF250C Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254C, 3 PIN Solid State Devices Inc (SSDI) FQP34N20 vs SFF250C
FQP34N20LJ69Z Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP34N20 vs FQP34N20LJ69Z
SFF250ZDBTX Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) FQP34N20 vs SFF250ZDBTX
SFF250ZDBTXV Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) FQP34N20 vs SFF250ZDBTXV

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