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Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
81AC8734
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Newark | Qf 200V 75Mohm To220 Rohs Compliant: Yes |Onsemi FQP34N20 Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.2600 / $3.3900 | Buy Now |
DISTI #
FQP34N20
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TME | Transistor: N-MOSFET, unipolar, 200V, 20A, 180W, TO220-3 Min Qty: 1 | 0 |
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$1.7400 / $2.6400 | RFQ |
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Flip Electronics | Stock | 24000 |
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RFQ | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 250 |
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$1.8200 / $1.9600 | Buy Now |
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FQP34N20
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP34N20
onsemi
Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220, 1000-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 640 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 31 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 180 W | |
Pulsed Drain Current-Max (IDM) | 124 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQP34N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP34N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQP34N20LJ69Z | Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP34N20 vs FQP34N20LJ69Z |
FQP34N20J69Z | Power Field-Effect Transistor, 31A I(D), 200V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP34N20 vs FQP34N20J69Z |