Part Details for FQP3N30 by Fairchild Semiconductor Corporation
Overview of FQP3N30 by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FQP3N30
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Power Field-Effect Transistor, 3.2A, 300V, 2.2ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 40097 |
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$0.5074 / $0.5969 | Buy Now |
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Chip1Cloud | MOSFET N-CH 300V 3.2A TO-220 | 48600 |
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RFQ |
Part Details for FQP3N30
FQP3N30 CAD Models
FQP3N30 Part Data Attributes:
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FQP3N30
Fairchild Semiconductor Corporation
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Datasheet
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FQP3N30
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.2A I(D), 300V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220 | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 3LD, TO220, JEDEC, MOLDED | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 3.2 A | |
Drain-source On Resistance-Max | 2.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 55 W | |
Pulsed Drain Current-Max (IDM) | 12.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |