Part Details for FQP3N80C by Fairchild Semiconductor Corporation
Overview of FQP3N80C by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for FQP3N80C
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FQP3N80C-ND
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DigiKey | POWER FIELD-EFFECT TRANSISTOR, 3 Min Qty: 401 Container: Bulk MARKETPLACE PRODUCT |
61653 In Stock |
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$0.7500 | Buy Now |
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Quest Components | 76 |
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$0.5880 / $1.9600 | Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 3A, 800V, 4.8ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 61653 |
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$0.6427 / $0.7561 | Buy Now |
Part Details for FQP3N80C
FQP3N80C CAD Models
FQP3N80C Part Data Attributes
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FQP3N80C
Fairchild Semiconductor Corporation
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Datasheet
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FQP3N80C
Fairchild Semiconductor Corporation
N-Channel QFET® MOSFET 800V, 3.0A, 4.8Ω, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220 | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 3LD, TO220, JEDEC, MOLDED | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 4.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 107 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQP3N80C
This table gives cross-reference parts and alternative options found for FQP3N80C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP3N80C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQP3N80C | Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220, 1000-TUBE | onsemi | FQP3N80C vs FQP3N80C |
FQP3N80C_NL | Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP3N80C vs FQP3N80C_NL |