Datasheets
FQP3N80C by:

Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220, 1000-TUBE

Part Details for FQP3N80C by onsemi

Overview of FQP3N80C by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for FQP3N80C

Part # Distributor Description Stock Price Buy
Rochester Electronics Power Field-Effect Transistor, 3A, 800V, 4.8ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 428
  • 1 $0.7561
  • 25 $0.7410
  • 100 $0.7107
  • 500 $0.6805
  • 1,000 $0.6427
$0.6427 / $0.7561 Buy Now
DISTI # FQP3N80C
TME Transistor: N-MOSFET, unipolar, 800V, 1.9A, Idm: 12A, 107W, TO220AB Min Qty: 1 0
  • 1 $1.2700
  • 3 $1.1400
  • 10 $1.0100
  • 50 $0.9000
  • 250 $0.8400
$0.8400 / $1.2700 RFQ

Part Details for FQP3N80C

FQP3N80C CAD Models

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FQP3N80C Part Data Attributes

FQP3N80C onsemi
Buy Now Datasheet
Compare Parts:
FQP3N80C onsemi Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description TO-220, 3 PIN
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 320 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 4.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 107 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQP3N80C

This table gives cross-reference parts and alternative options found for FQP3N80C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP3N80C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQP3N80C_NL Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP3N80C vs FQP3N80C_NL
Part Number Description Manufacturer Compare
PJU3NA80_T0_00001 Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PanJit Semiconductor FQP3N80C vs PJU3NA80_T0_00001
SSP3N80AJ69Z Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP3N80C vs SSP3N80AJ69Z
FQP3N80C_NL Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP3N80C vs FQP3N80C_NL
FQP3N80J69Z Power Field-Effect Transistor, 3A I(D), 800V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP3N80C vs FQP3N80J69Z

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