Part Details for FQP3N80C by onsemi
Overview of FQP3N80C by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for FQP3N80C
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Power Field-Effect Transistor, 3A, 800V, 4.8ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 428 |
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$0.6427 / $0.7561 | Buy Now |
DISTI #
FQP3N80C
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TME | Transistor: N-MOSFET, unipolar, 800V, 1.9A, Idm: 12A, 107W, TO220AB Min Qty: 1 | 0 |
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$0.8400 / $1.2700 | RFQ |
Part Details for FQP3N80C
FQP3N80C CAD Models
FQP3N80C Part Data Attributes
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FQP3N80C
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP3N80C
onsemi
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220, 1000-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 4.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 107 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQP3N80C
This table gives cross-reference parts and alternative options found for FQP3N80C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP3N80C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQP3N80C_NL | Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP3N80C vs FQP3N80C_NL |