Datasheets
FQP4N20L by:

N-Channel QFET® MOSFET 200V, 3.8A, 1.35Ω, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL

Part Details for FQP4N20L by Fairchild Semiconductor Corporation

Overview of FQP4N20L by Fairchild Semiconductor Corporation

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Price & Stock for FQP4N20L

Part # Distributor Description Stock Price Buy
DISTI # 2156-FQP4N20L-ND
DigiKey POWER FIELD-EFFECT TRANSISTOR, 3 Min Qty: 548 Container: Bulk MARKETPLACE PRODUCT 2000
In Stock
  • 548 $0.5500
$0.5500 Buy Now
Rochester Electronics Power Field-Effect Transistor, 3.8A, 200V, 1.4ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 51582
  • 1 $0.5533
  • 25 $0.5422
  • 100 $0.5201
  • 500 $0.4980
  • 1,000 $0.4703
$0.4703 / $0.5533 Buy Now

Part Details for FQP4N20L

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FQP4N20L Part Data Attributes

FQP4N20L Fairchild Semiconductor Corporation
Buy Now Datasheet
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FQP4N20L Fairchild Semiconductor Corporation N-Channel QFET® MOSFET 200V, 3.8A, 1.35Ω, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description TO-220, 3 PIN
Pin Count 3
Manufacturer Package Code 3LD, TO220, JEDEC, MOLDED
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 52 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 3.8 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 15.2 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQP4N20L

This table gives cross-reference parts and alternative options found for FQP4N20L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP4N20L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQP4N20L Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.35 Ω, TO-220, 1000-TUBE onsemi FQP4N20L vs FQP4N20L
Part Number Description Manufacturer Compare
IRL610A 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQP4N20L vs IRL610A
IRL610 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP4N20L vs IRL610
IRL610A Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP4N20L vs IRL610A
FQP4N20L Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.35 Ω, TO-220, 1000-TUBE onsemi FQP4N20L vs FQP4N20L
IRL610 Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor FQP4N20L vs IRL610

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