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Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.35 Ω, TO-220, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
20C4481
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Newark | Transistor,mosfet,n-Channel,200V V(Br)Dss,3.6A I(D),to-220Ab Rohs Compliant: Yes |Onsemi FQP4N20L Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.4700 / $0.6000 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 3.8A, 200V, 1.4ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 2000 |
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$0.4703 / $0.5533 | Buy Now |
DISTI #
FQP4N20L
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TME | Transistor: N-MOSFET, unipolar, 200V, 2.4A, Idm: 15.2A, 45W, TO220AB Min Qty: 1 | 0 |
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$0.6130 / $0.9200 | RFQ |
DISTI #
3616244
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Farnell | MOSFET'S - SINGLE RoHS: Compliant Min Qty: 1000 Lead time: 51 Weeks, 1 Days Container: Tube | 0 |
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$0.5595 | Buy Now |
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Flip Electronics | Stock, ship today | 50 |
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$0.4000 | RFQ |
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FQP4N20L
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP4N20L
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.35 Ω, TO-220, 1000-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 52 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 3.8 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 15.2 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQP4N20L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP4N20L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQP4N20L | N-Channel QFET® MOSFET 200V, 3.8A, 1.35Ω, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL | Fairchild Semiconductor Corporation | FQP4N20L vs FQP4N20L |