Datasheets
FQP5N30 by:

Power Field-Effect Transistor, 5.4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for FQP5N30 by Fairchild Semiconductor Corporation

Overview of FQP5N30 by Fairchild Semiconductor Corporation

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Price & Stock for FQP5N30

Part # Distributor Description Stock Price Buy
Rochester Electronics 5.4A, 300V, 0.9ohm, N-Channel Power MOSFET, TO-220AB RoHS: Compliant Status: Obsolete Min Qty: 1 2635
  • 1 $0.4436
  • 25 $0.4347
  • 100 $0.4170
  • 500 $0.3992
  • 1,000 $0.3771
$0.3771 / $0.4436 Buy Now

Part Details for FQP5N30

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FQP5N30 Part Data Attributes

FQP5N30 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQP5N30 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5.4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 340 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 5.4 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 21.6 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQP5N30

This table gives cross-reference parts and alternative options found for FQP5N30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP5N30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQP5N30 5.4A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQP5N30 vs FQP5N30
Part Number Description Manufacturer Compare
2SK1810 Power Field-Effect Transistor, 10A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Shindengen Electronic Manufacturing Co Ltd FQP5N30 vs 2SK1810
STP7NB30 7A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics FQP5N30 vs STP7NB30
FQP5N30 5.4A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQP5N30 vs FQP5N30
FQP7N30 Power Field-Effect Transistor, 7A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP5N30 vs FQP7N30
2SK1400 7A, 300V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation FQP5N30 vs 2SK1400
FS10UM-6 Power Field-Effect Transistor, 10A I(D), 300V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Mitsubishi Electric FQP5N30 vs FS10UM-6

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