Part Details for FQP6N80C by Fairchild Semiconductor Corporation
Results Overview of FQP6N80C by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQP6N80C Information
FQP6N80C by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQP6N80C
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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Vyrian | Transistors | 4415 |
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RFQ | |
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Win Source Electronics | Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 800V 5.5A TO-220 | 1300 |
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$1.5318 / $1.9784 | Buy Now |
Part Details for FQP6N80C
FQP6N80C CAD Models
FQP6N80C Part Data Attributes
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FQP6N80C
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FQP6N80C
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220 | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 680 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 2.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 158 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQP6N80C
This table gives cross-reference parts and alternative options found for FQP6N80C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP6N80C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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STD16NF25 | STMicroelectronics | $1.1614 | N-channel 250 V, 0.195 Ohm, 14 A STripFET II Power MOSFET in DPAK package | FQP6N80C vs STD16NF25 |
IXTQ26N50P | IXYS Corporation | $2.9605 | Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | FQP6N80C vs IXTQ26N50P |
IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FQP6N80C vs IRFS620 |
IRFS730B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | FQP6N80C vs IRFS730B |
IXTK74N20 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 74A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | FQP6N80C vs IXTK74N20 |
PHB23NQ15T/T3 | NXP Semiconductors | Check for Price | 23A, 150V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET | FQP6N80C vs PHB23NQ15T/T3 |
STD3NM50T4 | STMicroelectronics | Check for Price | 3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | FQP6N80C vs STD3NM50T4 |
FQPF4N90 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | FQP6N80C vs FQPF4N90 |
STD11NM50N | STMicroelectronics | Check for Price | N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a DPAK package | FQP6N80C vs STD11NM50N |
FQA35N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 35A I(D), 400V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | FQP6N80C vs FQA35N40 |
FQP6N80C Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the FQP6N80C is -55°C to 150°C.
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To ensure proper biasing, the FQP6N80C requires a gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) within the recommended operating range.
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The maximum current rating for the FQP6N80C is 6A, with a pulsed current rating of 12A.
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To protect the FQP6N80C from ESD, handle the device with an anti-static wrist strap or mat, and ensure that all equipment and tools are properly grounded.
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The recommended storage temperature range for the FQP6N80C is -40°C to 125°C.