Datasheets
FQP6N80C by:
Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for FQP6N80C by Fairchild Semiconductor Corporation

Results Overview of FQP6N80C by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FQP6N80C Information

FQP6N80C by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQP6N80C

Part # Distributor Description Stock Price Buy
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 2000
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Vyrian Transistors 4415
RFQ
Win Source Electronics Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 800V 5.5A TO-220 1300
  • 30 $1.9784
  • 63 $1.8508
  • 97 $1.7870
  • 140 $1.6594
  • 181 $1.5955
  • 227 $1.5318
$1.5318 / $1.9784 Buy Now

Part Details for FQP6N80C

FQP6N80C CAD Models

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FQP6N80C Part Data Attributes

FQP6N80C Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQP6N80C Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description TO-220, 3 PIN
Pin Count 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 680 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 158 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQP6N80C

This table gives cross-reference parts and alternative options found for FQP6N80C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP6N80C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STD16NF25 STMicroelectronics $1.1614 N-channel 250 V, 0.195 Ohm, 14 A STripFET II Power MOSFET in DPAK package FQP6N80C vs STD16NF25
IXTQ26N50P IXYS Corporation $2.9605 Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN FQP6N80C vs IXTQ26N50P
IRFS620 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN FQP6N80C vs IRFS620
IRFS730B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN FQP6N80C vs IRFS730B
IXTK74N20 IXYS Corporation Check for Price Power Field-Effect Transistor, 74A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA FQP6N80C vs IXTK74N20
PHB23NQ15T/T3 NXP Semiconductors Check for Price 23A, 150V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET FQP6N80C vs PHB23NQ15T/T3
STD3NM50T4 STMicroelectronics Check for Price 3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 FQP6N80C vs STD3NM50T4
FQPF4N90 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 2.5A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN FQP6N80C vs FQPF4N90
STD11NM50N STMicroelectronics Check for Price N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a DPAK package FQP6N80C vs STD11NM50N
FQA35N40 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 35A I(D), 400V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN FQP6N80C vs FQA35N40

FQP6N80C Related Parts

FQP6N80C Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FQP6N80C is -55°C to 150°C.

  • To ensure proper biasing, the FQP6N80C requires a gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) within the recommended operating range.

  • The maximum current rating for the FQP6N80C is 6A, with a pulsed current rating of 12A.

  • To protect the FQP6N80C from ESD, handle the device with an anti-static wrist strap or mat, and ensure that all equipment and tools are properly grounded.

  • The recommended storage temperature range for the FQP6N80C is -40°C to 125°C.

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