Part Details for FQP6N80C by onsemi
Results Overview of FQP6N80C by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FQP6N80C Information
FQP6N80C by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQP6N80C
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84H4781
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Newark | Transistor, mosfet, n-Channel,800V V(Br)Dss,5.5A I(D),to-220Ab Rohs Compliant: Yes |Onsemi FQP6N80C RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.0900 / $1.3700 | Buy Now |
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DISTI #
FQP6N80C
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Avnet Americas | Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP6N80C) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
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$1.0416 / $1.2019 | Buy Now |
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DISTI #
FQP6N80C
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TME | Transistor: N-MOSFET, unipolar, 800V, 3.2A, 158W, TO220AB Min Qty: 1 | 155 |
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$1.3400 / $3.0100 | Buy Now |
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DISTI #
FQP6N80C
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 | 0 |
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$0.9800 | Buy Now |
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Chip 1 Exchange | INSTOCK | 2340 |
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RFQ | |
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DISTI #
FQP6N80C
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Avnet Asia | Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP6N80C) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | 0 |
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$0.9191 / $1.0279 | Buy Now |
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DISTI #
FQP6N80C
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Avnet Silica | Trans MOSFET NCH 800V 55A 3Pin3Tab TO220AB Rail (Alt: FQP6N80C) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | Silica - 400 |
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Buy Now | |
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DISTI #
FQP6N80C
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EBV Elektronik | Trans MOSFET NCH 800V 55A 3Pin3Tab TO220AB Rail (Alt: FQP6N80C) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days | EBV - 850 |
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Buy Now | |
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LCSC | 800V 5.5A 2.510V2.75A 158W 3V 1 N-Channel TO-220 MOSFETs ROHS | 12 |
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$1.5178 / $2.4049 | Buy Now |
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New Advantage Corporation | TO-220 3LN-CH/800V/6A/C-FET RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 700 |
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$4.5500 / $4.9300 | Buy Now |
Part Details for FQP6N80C
FQP6N80C CAD Models
FQP6N80C Part Data Attributes
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FQP6N80C
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP6N80C
onsemi
Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220, TO-220-3, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 | |
| Package Description | TO-220, 3 PIN | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 680 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 2.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 158 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FQP6N80C Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the FQP6N80C is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's power dissipation to 50-70% of its maximum rating to ensure reliable operation.
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To ensure the FQP6N80C is properly biased, follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the gate-source voltage (Vgs) to the recommended value (e.g., 10V) and ensuring the drain-source voltage (Vds) is within the specified range. Additionally, consider using a gate driver or voltage regulator to maintain a stable bias voltage.
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For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) between the device and the heat sink. A heat sink with a thermal resistance of 1-2°C/W is recommended. Follow the datasheet's recommended land pattern and keep the device's thermal pad connected to the heat sink.
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To protect the FQP6N80C from ESD, follow proper handling and storage procedures. Use an ESD-safe workstation, wear an ESD strap, and handle the device by the body or pins, not the leads. Ensure the PCB has ESD protection components, such as TVS diodes or ESD arrays, and consider using a conformal coating to protect the device from moisture and humidity.
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The FQP6N80C is a high-reliability device with a typical lifespan of 10-20 years, depending on operating conditions. Follow the recommended operating conditions, storage, and handling procedures to ensure the device meets its expected lifespan. Consider using a reliability prediction model, such as MIL-HDBK-217, to estimate the device's reliability under specific operating conditions.