Datasheets
FQP6N80C by:
onsemi

Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220, TO-220-3, 1000-TUBE

Part Details for FQP6N80C by onsemi

Results Overview of FQP6N80C by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FQP6N80C Information

FQP6N80C by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQP6N80C

Part # Distributor Description Stock Price Buy
DISTI # 84H4781
Newark Transistor, mosfet, n-Channel,800V V(Br)Dss,5.5A I(D),to-220Ab Rohs Compliant: Yes |Onsemi FQP6N80C RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $1.3700
  • 2,500 $1.1200
  • 5,000 $1.0900
$1.0900 / $1.3700 Buy Now
DISTI # FQP6N80C
Avnet Americas Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP6N80C) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube 512 Factory Stock
  • 1,000 $1.1171
  • 2,000 $1.0937
  • 4,000 $1.0468
  • 6,000 $1.0156
  • 8,000 $0.9765
$0.9765 / $1.1171 Buy Now
DISTI # FQP6N80C
TME Transistor: N-MOSFET, unipolar, 800V, 3.2A, 158W, TO220AB Min Qty: 1 225
  • 1 $2.1200
  • 10 $1.8000
  • 50 $1.5300
  • 100 $1.4300
  • 250 $1.2900
  • 500 $1.1900
  • 1,000 $1.1800
$1.1800 / $2.1200 Buy Now
DISTI # FQP6N80C
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 0
  • 1,000 $0.9800
$0.9800 Buy Now
Chip 1 Exchange INSTOCK 2340
RFQ
DISTI # FQP6N80C
Avnet Asia Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP6N80C) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days 0
  • 1,000 $1.0279
  • 2,000 $1.0146
  • 3,000 $1.0015
  • 5,000 $0.9889
  • 10,000 $0.9644
  • 25,000 $0.9412
  • 50,000 $0.9191
$0.9191 / $1.0279 Buy Now
DISTI # FQP6N80C
Avnet Silica Trans MOSFET NCH 800V 55A 3Pin3Tab TO220AB Rail (Alt: FQP6N80C) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days Silica - 400
Buy Now
DISTI # FQP6N80C
EBV Elektronik Trans MOSFET NCH 800V 55A 3Pin3Tab TO220AB Rail (Alt: FQP6N80C) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 850
Buy Now
LCSC 800V 5.5A 2.510V2.75A 158W 3V 1 N-Channel TO-220 MOSFETs ROHS 12
  • 1 $2.4049
  • 10 $2.0745
  • 50 $1.8678
  • 100 $1.6551
  • 500 $1.5600
  • 1,000 $1.5178
$1.5178 / $2.4049 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 50 700
  • 50 $4.8800
  • 700 $4.5000
$4.5000 / $4.8800 Buy Now
Wuhan P&S   Min Qty: 1 1800
  • 1 $2.7300
  • 100 $1.7400
  • 500 $1.4400
  • 1,000 $1.3200
$1.3200 / $2.7300 Buy Now

Part Details for FQP6N80C

FQP6N80C CAD Models

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FQP6N80C Part Data Attributes

FQP6N80C onsemi
Buy Now Datasheet
Compare Parts:
FQP6N80C onsemi Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220, TO-220-3, 1000-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-220-3
Package Description TO-220, 3 PIN
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 680 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 158 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

FQP6N80C Related Parts

FQP6N80C Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the FQP6N80C is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's power dissipation to 50-70% of its maximum rating to ensure reliable operation.

  • To ensure the FQP6N80C is properly biased, follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the gate-source voltage (Vgs) to the recommended value (e.g., 10V) and ensuring the drain-source voltage (Vds) is within the specified range. Additionally, consider using a gate driver or voltage regulator to maintain a stable bias voltage.

  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) between the device and the heat sink. A heat sink with a thermal resistance of 1-2°C/W is recommended. Follow the datasheet's recommended land pattern and keep the device's thermal pad connected to the heat sink.

  • To protect the FQP6N80C from ESD, follow proper handling and storage procedures. Use an ESD-safe workstation, wear an ESD strap, and handle the device by the body or pins, not the leads. Ensure the PCB has ESD protection components, such as TVS diodes or ESD arrays, and consider using a conformal coating to protect the device from moisture and humidity.

  • The FQP6N80C is a high-reliability device with a typical lifespan of 10-20 years, depending on operating conditions. Follow the recommended operating conditions, storage, and handling procedures to ensure the device meets its expected lifespan. Consider using a reliability prediction model, such as MIL-HDBK-217, to estimate the device's reliability under specific operating conditions.

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