Part Details for FQP6N80C by onsemi
Overview of FQP6N80C by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FQP6N80C
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
97K0191
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Newark | Mosfet, N, To-220, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:5.5A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:158W Rohs Compliant: Yes |Onsemi FQP6N80C Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$0.9730 / $2.2100 | Buy Now |
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DISTI #
84H4781
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Newark | Transistor,mosfet,n-Channel,800V V(Br)Dss,5.5A I(D),to-220Ab Rohs Compliant: Yes |Onsemi FQP6N80C Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.0200 / $1.3000 | Buy Now |
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DISTI #
FQP6N80C-ND
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DigiKey | MOSFET N-CH 800V 5.5A TO220-3 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
140 In Stock |
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$0.9765 / $2.3300 | Buy Now |
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DISTI #
FQP6N80C
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Avnet Americas | Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP6N80C) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$0.9687 / $1.1562 | Buy Now |
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DISTI #
512-FQP6N80C
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Mouser Electronics | MOSFET 800V N-Ch Q-FET advance C-Series RoHS: Compliant | 3713 |
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$1.0000 / $2.3300 | Buy Now |
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Future Electronics | N-Channel 800 V 2.5 Ohm Through Hole Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 100 Container: Tube | 0Tube |
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$1.0300 / $1.1800 | Buy Now |
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Future Electronics | N-Channel 800 V 2.5 Ohm Through Hole Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 100 Container: Tube | 0Tube |
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$1.0300 / $1.1800 | Buy Now |
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DISTI #
FQP6N80C
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Avnet Americas | Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP6N80C) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$0.9687 / $1.1562 | Buy Now |
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DISTI #
FQP6N80C
|
TME | Transistor: N-MOSFET, unipolar, 800V, 3.2A, 158W, TO220AB Min Qty: 1 | 268 |
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$1.3400 / $2.0300 | Buy Now |
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DISTI #
FQP6N80C
|
Avnet Americas | Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP6N80C) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$0.9687 / $1.1562 | Buy Now |
Part Details for FQP6N80C
FQP6N80C CAD Models
FQP6N80C Part Data Attributes
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FQP6N80C
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP6N80C
onsemi
Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220, 1000-TUBE
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-220, 3 PIN | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 680 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 2.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 158 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |