Datasheets
FQP9N90C by:

Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.4 Ω, TO-220, TO-220-3, 1000-TUBE

Part Details for FQP9N90C by onsemi

Results Overview of FQP9N90C by onsemi

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Applications Energy and Power Systems Renewable Energy

FQP9N90C Information

FQP9N90C by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQP9N90C

Part # Distributor Description Stock Price Buy
DISTI # 97K0203
Newark Power Mosfet, N Channel, 8 A, 900 V, 1.12 Ohm, 10 V, 5 V Rohs Compliant: Yes |Onsemi FQP9N90C RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 654
  • 1 $3.3600
$3.3600 Buy Now
DISTI # FQP9N90C
Avnet Americas Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP9N90C) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.7937
  • 2,000 $1.7720
  • 4,000 $1.7510
  • 6,000 $1.7427
  • 8,000 $1.7304
$1.7304 / $1.7937 Buy Now
DISTI # FQP9N90C
TME Transistor: N-MOSFET, unipolar, 900V, 2.8A, 205W, TO220AB Min Qty: 1 56
  • 1 $3.5200
  • 10 $2.9300
  • 50 $2.5900
  • 100 $2.4300
  • 500 $2.2800
$2.2800 / $3.5200 Buy Now
DISTI # FQP9N90C
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 0
  • 1,000 $1.8400
$1.8400 Buy Now
DISTI # FQP9N90C
Avnet Silica Trans MOSFET NCH 900V 8A 3Pin3Tab TO220AB Rail (Alt: FQP9N90C) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days Silica - 350
Buy Now
DISTI # FQP9N90C
EBV Elektronik Trans MOSFET NCH 900V 8A 3Pin3Tab TO220AB Rail (Alt: FQP9N90C) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days EBV - 300
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 50 250
  • 50 $7.8000
  • 250 $7.2100
$7.2100 / $7.8000 Buy Now

Part Details for FQP9N90C

FQP9N90C CAD Models

FQP9N90C Part Data Attributes

FQP9N90C onsemi
Buy Now Datasheet
Compare Parts:
FQP9N90C onsemi Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.4 Ω, TO-220, TO-220-3, 1000-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-220-3
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 900 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 205 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQP9N90C

This table gives cross-reference parts and alternative options found for FQP9N90C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP9N90C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQP9N90C Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN FQP9N90C vs FQP9N90C

FQP9N90C Related Parts

FQP9N90C Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the FQP9N90C is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and voltage ratings. For the FQP9N90C, the maximum Tj is 150°C, and the maximum voltage rating is 900V. Engineers should consult the application notes and thermal design guidelines provided by onsemi for more information.

  • To ensure the FQP9N90C is properly biased for optimal performance, engineers should follow the recommended biasing conditions outlined in the datasheet and application notes. This typically involves setting the gate-source voltage (Vgs) within the recommended range (e.g., 4-10V) and ensuring the drain-source voltage (Vds) is within the maximum rating (900V). Additionally, engineers should consider the device's threshold voltage (Vth) and ensure the gate drive is sufficient to fully enhance the device.

  • For optimal performance and reliability, engineers should follow recommended PCB layout and thermal design guidelines for the FQP9N90C. This includes using a multi-layer PCB with a solid ground plane, minimizing trace lengths and widths, and ensuring adequate thermal dissipation through the use of heat sinks or thermal interfaces. Engineers should consult the application notes and thermal design guidelines provided by onsemi for more information.

  • To protect the FQP9N90C from overvoltage and overcurrent conditions, engineers should implement suitable protection circuits and design considerations. This may include the use of voltage clamping devices, such as zener diodes or transient voltage suppressors, and current limiting resistors or fuses. Additionally, engineers should ensure the device is operated within its recommended voltage and current ratings, and consider the use of overvoltage and overcurrent protection ICs.

  • The recommended gate drive and switching characteristics for the FQP9N90C depend on the specific application and operating conditions. As a general guideline, engineers should ensure the gate drive is sufficient to fully enhance the device, with a recommended gate-source voltage (Vgs) of 10-15V. The switching frequency and rise/fall times should be optimized for the specific application, taking into account the device's switching characteristics and thermal limitations.

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