Datasheets
FQPF3N80C by:

N-Channel QFET® MOSFET 800V, 3A, 4.8Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL

Part Details for FQPF3N80C by Fairchild Semiconductor Corporation

Overview of FQPF3N80C by Fairchild Semiconductor Corporation

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Price & Stock for FQPF3N80C

Part # Distributor Description Stock Price Buy
Quest Components   179
  • 1 $1.7630
  • 15 $1.0578
  • 58 $0.8815
$0.8815 / $1.7630 Buy Now
Quest Components   6400
  • 1 $2.2500
  • 890 $0.7875
  • 1,906 $0.6750
$0.6750 / $2.2500 Buy Now
Rochester Electronics Power Field-Effect Transistor, 3A, 800V, 4.8ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: Active Min Qty: 1 198902
  • 1 $0.8916
  • 25 $0.8738
  • 100 $0.8381
  • 500 $0.8024
  • 1,000 $0.7579
$0.7579 / $0.8916 Buy Now

Part Details for FQPF3N80C

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FQPF3N80C Part Data Attributes

FQPF3N80C Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQPF3N80C Fairchild Semiconductor Corporation N-Channel QFET® MOSFET 800V, 3A, 4.8Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description LEAD FREE, TO-220F, 3 PIN
Pin Count 3
Manufacturer Package Code TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 320 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 4.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 39 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQPF3N80C

This table gives cross-reference parts and alternative options found for FQPF3N80C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF3N80C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQPF3N80C Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F, 1000-TUBE onsemi FQPF3N80C vs FQPF3N80C
FQPF3N80CYDTU Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Fairchild Semiconductor Corporation FQPF3N80C vs FQPF3N80CYDTU
FQPF3N80CYDTU 3A, 800V, 4.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Rochester Electronics LLC FQPF3N80C vs FQPF3N80CYDTU
Part Number Description Manufacturer Compare
FQPF3N80C Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F, 1000-TUBE onsemi FQPF3N80C vs FQPF3N80C
FQPF3N80CYDTU 3A, 800V, 4.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Rochester Electronics LLC FQPF3N80C vs FQPF3N80CYDTU
FQPF3N80CYDTU Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Fairchild Semiconductor Corporation FQPF3N80C vs FQPF3N80CYDTU

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